公开(公告)号：US10014285B2

公开(公告)日：2018-07-03

申请号：US15212615

申请日：2016-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Hyun Kim ,  Seung-Hoon Kim ,  Sang-Il Jung

IPC: H01L23/528 ,  H01L25/18 ,  H01L23/48 ,  H01L27/146 ,  G02F1/13 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532

CPC classification number: H01L25/18 ,  G02F1/13 ,  G02F2001/13312 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/53276 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2225/06544 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1438 ,  H01L2924/1443

Abstract: A semiconductor device may include a first conductive pattern disposed in a first interlayer insulating film, a second conductive pattern disposed in a second interlayer insulating film positioned on the first interlayer insulating film, a through electrode partially penetrating through the first interlayer insulating film and the second interlayer insulating film. The through electrode electrically connects the first conductive pattern and the second conductive pattern. The device further includes a first pattern completely surrounding side surfaces of the through electrode, and a second pattern between the first pattern and the through electrode. The second pattern is separated from the first pattern and the through electrode. The device includes a third pattern connecting the first pattern and the second pattern.

公开(公告)号：USD764520S1

公开(公告)日：2016-08-23

申请号：US29464317

申请日：2013-08-15

Applicant: Samsung Electronics Co., Ltd.

Designer： Jae-Myoung Lee ,  Seung-Hoon Kim