公开(公告)号：US11889347B2

公开(公告)日：2024-01-30

申请号：US17878338

申请日：2022-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyu Baek ,  Soenghun Kim ,  Namhoon Kim ,  Myunghwan Kim ,  Hyoungmin Kim ,  Sungnam Hong

IPC: H04W28/02 ,  H04W76/11 ,  H04L1/1812 ,  H04W56/00 ,  H04W74/08 ,  H04W76/27 ,  H04W72/56

CPC classification number: H04W28/0278 ,  H04L1/1812 ,  H04W56/0045 ,  H04W72/56 ,  H04W74/0833 ,  H04W76/11 ,  H04W76/27

Abstract: A pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system, such as long term evolution (LTE). A user equipment (UE) in a wireless communication system is provided. The UE includes a transceiver, and at least one processor coupled to the transceiver and configured to generate a lone truncated buffer status report (BSR) based on a number of padding bits, and transmit the long truncated BSR informing of data volume for at least one logical channel group among logical channel groups having data for transmission, wherein the data volume for the at least one logical channel group is reported following an order that is determined based on a highest priority logical channel in each of the at least one logical channel group.

公开(公告)号：US11887913B2

公开(公告)日：2024-01-30

申请号：US18066487

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chajea Jo ,  Ohguk Kwon ,  Namhoon Kim ,  Hyoeun Kim ,  Seunghoon Yeon

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/562 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0652 ,  H01L2224/05008 ,  H01L2224/05025 ,  H01L2224/13026 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/351

Abstract: An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

公开(公告)号：US11552037B2

公开(公告)日：2023-01-10

申请号：US17193435

申请日：2021-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namhoon Kim ,  Seunghoon Yeon ,  Yonghoe Cho

IPC: H01L23/00

Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.

公开(公告)号：US11545417B2

公开(公告)日：2023-01-03

申请号：US17162418

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chajea Jo ,  Ohguk Kwon ,  Namhoon Kim ,  Hyoeun Kim ,  Seunghoon Yeon

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/768 ,  H01L23/00

Abstract: An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

公开(公告)号：US10916249B2

公开(公告)日：2021-02-09

申请号：US16265237

申请日：2019-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngho Han ,  Keunseok Cho ,  Jaeyoung Roh ,  Namhoon Kim ,  Chiyoun Park ,  Jongyoub Ryu

IPC: G10L15/22 ,  G10L15/02 ,  G10L15/187 ,  G10L25/84 ,  G10L17/02 ,  G10L17/24

Abstract: A method of processing a speech signal for speaker recognition in an electronic apparatus includes: obtaining a speech signal of a first user; extracting a speech feature comprising a feature value from the speech signal; comparing the speech feature extracted from the speech signal of the first user with a predetermined reference value; selecting a first user feature that corresponds to the speech feature of the first user compared with the reference value; generating a recommended phrase used for speaker recognition based on the first user feature; and outputting the recommended phrase.