公开(公告)号：US20220238539A1

公开(公告)日：2022-07-28

申请号：US17723523

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Lee ,  Jongho Park ,  Musarrat Hasan ,  Wandon Kim ,  Seungkeun Cha

IPC: H01L27/1159 ,  H01L29/78 ,  H01L27/11585 ,  H01L29/51

Abstract: A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.