公开(公告)号：US11296037B2

公开(公告)日：2022-04-05

申请号：US16668289

申请日：2019-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug Min ,  Younhee Kang ,  Min-Woo Song

IPC: H01L23/552 ,  H01L23/498 ,  H01L25/00

Abstract: A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.

公开(公告)号：US10168204B2

公开(公告)日：2019-01-01

申请号：US14922687

申请日：2015-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun Choi ,  Min-Woo Song

IPC: G01N29/12 ,  G01N29/44 ,  H04R29/00 ,  G01H13/00 ,  G01M3/24

Abstract: An electronic device is provided. The electronic device includes a speaker configured to output a reference signal in the form of a sound and a processor configured to calculate a lowest resonant frequency from a signal sensed by feeding back the reference signal transmitted to the speaker and to determine whether the electronic device is waterproofed based on the calculated lowest resonant frequency.

公开(公告)号：US09580800B2

公开(公告)日：2017-02-28

申请号：US14600132

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Hoon Lee ,  June-Hee Lee ,  Geun-Woo Kim ,  Min-Woo Song ,  Seok-Jun Won

IPC: G01R31/26 ,  H01L21/66 ,  C23C16/44 ,  C23C16/32 ,  C23C16/34 ,  H01L21/67

CPC classification number: C23C16/4404 ,  C23C16/32 ,  C23C16/34 ,  G01B2210/56 ,  H01L21/67005

Abstract: A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.

Abstract translation: 提供了一种用于操作半导体制造设备的方法。 该方法包括在反应室的内侧表面和反应室中的基板上形成导电薄膜，所述导电薄膜包括第一导电材料，并且在反应的内侧表面上形成防颗粒层 其中形成导电薄膜。