公开(公告)号：US20190237390A1

公开(公告)日：2019-08-01

申请号：US16263408

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soojung RHO ,  Chisung OH ,  Kyomin SOHN ,  Yong-Ki KIM ,  Jong-Ho MOON ,  SeungHan WOO ,  Jaeyoun YOUN

IPC: H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/538

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.