公开(公告)号：US20160163925A1

公开(公告)日：2016-06-09

申请号：US14958002

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Hyun Jo ,  Ki Seok Kim ,  Seong Seok Yang ,  Yong Il Kim ,  Seung Hwan Lee

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/58

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, microstructures regularly arranged on the first conductivity-type semiconductor layer around the light-emitting structure, and a gradient refractive layer on at least a portion of the microstructures, the gradient refractive layer having a lower refractive index than the first conductivity-type semiconductor layer.

Abstract translation: 一种半导体发光器件包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构，在发光二极管周围的第一导电型半导体层上规则排列的微结构 结构，以及至少部分微结构的梯度折射层，所述梯度折射层具有比所述第一导电类型半导体层低的折射率。