公开(公告)号：US12107193B2

公开(公告)日：2024-10-01

申请号：US17195121

申请日：2021-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho Kim ,  Junhee Choi

IPC: H01L33/44 ,  H01L25/075 ,  H01L27/12 ,  H01L33/06 ,  H01L33/24 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L25/0753 ,  H01L27/1214 ,  H01L33/06 ,  H01L33/24 ,  H01L33/38 ,  H01L33/62

Abstract: A nanorod type micro-light emitting diode (LED) includes a nanorod stack structure including a multi-quantum well layer and emitting light from a side surface, and a functional material layer covering the side surface of the nanorod stack structure and increasing a total internal reflection angle of the nanorod stack structure. The functional material layer has a refractive index between a refractive index of the nanorod stack structure and a refractive index of air, and includes a plurality of material layers having a refractive index distribution in which a refractive index decreases as a distance from the side surface increases.

公开(公告)号：US12107186B2

公开(公告)日：2024-10-01

申请号：US18322075

申请日：2023-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/32 ,  H01L33/0075

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：US20240266465A1

公开(公告)日：2024-08-08

申请号：US18636979

申请日：2024-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Jinjoo Park

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/30

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

公开(公告)号：US20240266387A1

公开(公告)日：2024-08-08

申请号：US18639224

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee Choi

IPC: H01L27/15 ,  G09G3/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L33/005 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.

公开(公告)号：US12046700B2

公开(公告)日：2024-07-23

申请号：US18238390

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US11990563B2

公开(公告)日：2024-05-21

申请号：US17197326

申请日：2021-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Jinjoo Park

IPC: H01L33/08 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/30

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

公开(公告)号：US11923195B2

公开(公告)日：2024-03-05

申请号：US17352851

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee Choi ,  Vladmir Matias ,  Joohun Han

IPC: H01L21/02

CPC classification number: H01L21/02502 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02598 ,  H01L21/02192 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631

Abstract: A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.

公开(公告)号：US11837155B2

公开(公告)日：2023-12-05

申请号：US17725935

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  H01L33/10 ,  H01L33/346 ,  G09G2300/0452

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11670667B2

公开(公告)日：2023-06-06

申请号：US16922147

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Nakhyun Kim ,  Junghun Park

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US11424388B2

公开(公告)日：2022-08-23

申请号：US16562791

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang ,  Sungjin Kang ,  Junghun Park

IPC: H01L33/46 ,  H01L25/16

Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.