公开(公告)号：US08975653B2

公开(公告)日：2015-03-10

申请号：US14080455

申请日：2013-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pun Jae Choi ,  Seung Yu Kim ,  Jin Bock Lee

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/22

CPC classification number: H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2933/0016

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract translation: 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。