公开(公告)号：US11954755B2

公开(公告)日：2024-04-09

申请号：US17525620

申请日：2021-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Jihye Lee ,  Taegyu Lim ,  Taeoh Kim ,  Hyeongmin Lee ,  Sangyoun Lee

IPC: G06T1/00 ,  G06F18/213 ,  G06F18/22 ,  G06F18/23 ,  G06F18/28 ,  G06N3/04 ,  G06V10/44 ,  G06V10/82

CPC classification number: G06T1/00 ,  G06F18/213 ,  G06F18/22 ,  G06F18/23 ,  G06F18/28 ,  G06N3/04 ,  G06V10/454 ,  G06V10/82

Abstract: The present disclosure relates to an image processing device including: a memory configured to store one or more instructions; and a processor configured to execute the one or more instructions stored in the memory to: extract one or more input patches based on an input image; extract one or more pieces of feature information respectively corresponding to the one or more input patches, based on a dictionary including mapping information indicating mappings between a plurality of patches and pieces of feature information respectively corresponding to the plurality of patches; and obtain a final image by performing a convolution operation between the extracted one or more pieces of feature information and a filter kernel.

公开(公告)号：USD986870S1

公开(公告)日：2023-05-23

申请号：US29785301

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Jaehyung Kim ,  Kwanhee Lee ,  Jihye Lee

Abstract: FIG. 1 is a front perspective view of a case for electronic device showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The broken lines in the figures depict portions of the case for electronic device which form no part of the claimed design.

公开(公告)号：US11171135B2

公开(公告)日：2021-11-09

申请号：US16896423

申请日：2020-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Kim ,  Jihye Lee ,  Sangmoon Lee ,  Seung Hun Lee

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：USD986871S1

公开(公告)日：2023-05-23

申请号：US29785307

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Jaehyung Kim ,  Kwanhee Lee ,  Jihye Lee

Abstract: FIG. 1 is a front perspective view of a case for electronic device showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The broken lines in the figures depict portions of the case for electronic device which form no part of the claimed design.

公开(公告)号：US11631670B2

公开(公告)日：2023-04-18

申请号：US17509239

申请日：2021-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Kim ,  Jihye Lee ,  Sangmoon Lee ,  Seung Hun Lee

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US20210203917A1

公开(公告)日：2021-07-01

申请号：US17135247

申请日：2020-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bora JIN ,  Yeoul Lee ,  Jihye Lee ,  Kyungmin Lim ,  Jaesung Lee

IPC: H04N13/395 ,  H04N13/122 ,  H04N13/351 ,  G09G3/00 ,  G06N3/08

Abstract: An electronic apparatus includes a stacked display including a plurality of panels, and a processor configured to obtain first light field (LF) images of different viewpoints, input the obtained first LF images to an artificial intelligence model for converting an LF image into a layer stack, to obtain a plurality of layer stacks to which a plurality of shifting parameters indicating depth information in the first LF images are respectively applied, and control the stacked display to sequentially and repeatedly display, on the stacked display, the obtained plurality of layer stacks. The artificial intelligence model is trained by applying the plurality of shifting parameters that are obtained based on the depth information in the first LF images.

公开(公告)号：USD807312S1

公开(公告)日：2018-01-09

申请号：US29565126

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Heeseok Jeong ,  Jihye Lee ,  Searom Jung ,  Daejoong Kim ,  Jisoo Lim ,  Jeasung Kim ,  Sangyoung Lee ,  Joonyoung Lee ,  Hyungsun Lee ,  Kyuhyun Cho ,  Shiyun Cho ,  Younho Choi

公开(公告)号：USD806663S1

公开(公告)日：2018-01-02

申请号：US29565084

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Sangyoung Lee ,  Jihye Lee ,  Searom Jung ,  Daejoong Kim ,  Jisoo Lim ,  Jeasung Kim ,  Joonyoung Lee ,  Hyungsun Lee ,  Heeseok Jeong ,  Kyuhyun Cho ,  Shiyun Cho ,  Younho Choi

公开(公告)号：US11948485B2

公开(公告)日：2024-04-02

申请号：US17567565

申请日：2022-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bora Jin ,  Youngjin Yoon ,  Jihye Lee ,  Yeoul Lee ,  Sunil Lee ,  Jaesung Lee

IPC: G09G3/00

CPC classification number: G09G3/007 ,  G09G3/003 ,  G09G2300/023

Abstract: An electronic apparatus and a method for controlling thereof are provided. The method includes acquiring a first Light field (LF) image of different viewpoints, inputting the first LF image to a first artificial intelligence model to acquire a pixel shift value for converting pixels in the first LF image, converting the pixels in the first LF image according to the pixel shift value to acquire a second LF image, inputting the first LF image and the second LF image to a second artificial intelligence model for converting the LF image to a layer image to acquire the layer image, inputting the acquired layer image to a simulation model for restoring the LF image to acquire a third LF image, and learning the first artificial intelligence model and the second artificial intelligence model based on the second LF image and the third LF image.

公开(公告)号：USD986869S1

公开(公告)日：2023-05-23

申请号：US29785292

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Jaehyung Kim ,  Kwanhee Lee ,  Jihye Lee

Abstract: FIG. 1 is a front perspective view of a case for electronic device showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The broken lines in the figures depict portions of the case for electronic device which form no part of the claimed design.