SEMICONDUCTOR DEVICES
    12.
    发明申请

    公开(公告)号:US20190157275A1

    公开(公告)日:2019-05-23

    申请号:US16134252

    申请日:2018-09-18

    Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

    MOS transistors including U shaped channels regions with separated protruding portions
    13.
    发明授权
    MOS transistors including U shaped channels regions with separated protruding portions 有权
    MOS晶体管包括具有分离的突出部分的U形沟道区域

    公开(公告)号:US08957474B2

    公开(公告)日:2015-02-17

    申请号:US13894575

    申请日:2013-05-15

    Abstract: A MOS transistor, can include a u-shaped cross-sectional channel region including spaced apart protruding portions separated by a trench and connected to one another by a connecting portion of the channel region at lower ends of the spaced apart protruding portions of the channel region. First and second impurity regions can be located at opposite ends of the -shaped cross-sectional channel region and separated from one another by the trench. A gate electrode can cover at least a planar face of the u-shaped cross-sectional channel region including the spaced apart protruding portions and the connecting portion and exposing the first and second impurity regions.

    Abstract translation: MOS晶体管可以包括U形横截面沟道区域,其包括由沟槽分隔开的间隔开的突出部分,并且通过沟道区域的连接部分在通道区域的间隔开的突出部分的下端处彼此连接 。 第一和第二杂质区域可以位于形状的横截面沟道区域的相对端并且通过沟槽彼此分离。 栅电极可以覆盖包括间隔开的突出部分和连接部分的u形横截面沟道区域的至少一个平面,并暴露第一和第二杂质区域。

    MOS TRANSISTORS INCLUDING U SHAPED CHANNELS REGIONS WITH SEPARATED PROTRUDING PORTIONS
    14.
    发明申请
    MOS TRANSISTORS INCLUDING U SHAPED CHANNELS REGIONS WITH SEPARATED PROTRUDING PORTIONS 有权
    包含U形通道的MOS晶体管,具有独立的输入部分

    公开(公告)号:US20130307068A1

    公开(公告)日:2013-11-21

    申请号:US13894575

    申请日:2013-05-15

    Abstract: A MOS transistor, can include a u-shaped cross-sectional channel region including spaced apart protruding portions separated by a trench and connected to one another by a connecting portion of the channel region at lower ends of the spaced apart protruding portions of the channel region. First and second impurity regions can be located at opposite ends of the -shaped cross-sectional channel region and separated from one another by the trench. A gate electrode can cover at least a planar face of the u-shaped cross-sectional channel region including the spaced apart protruding portions and the connecting portion and exposing the first and second impurity regions.

    Abstract translation: MOS晶体管可以包括U形横截面沟道区域,其包括由沟槽分隔开的间隔开的突出部分,并且通过沟道区域的连接部分在通道区域的间隔开的突出部分的下端处彼此连接 。 第一和第二杂质区域可以位于形状的横截面沟道区域的相对端并且通过沟槽彼此分离。 栅电极可以覆盖包括间隔开的突出部分和连接部分的u形横截面沟道区域的至少一个平面,并暴露第一和第二杂质区域。

    Semiconductor devices
    15.
    发明授权

    公开(公告)号:US10818671B2

    公开(公告)日:2020-10-27

    申请号:US16134252

    申请日:2018-09-18

    Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

    Method of capturing moving picture and apparatus for reproducing moving picture
    16.
    发明授权
    Method of capturing moving picture and apparatus for reproducing moving picture 有权
    拍摄运动图像的方法和用于再现运动图像的装置

    公开(公告)号:US08913870B2

    公开(公告)日:2014-12-16

    申请号:US13858468

    申请日:2013-04-08

    Inventor: Ji-Young Kim

    Abstract: A method and an apparatus for capturing video data and audio data according to reproduction of a moving picture stream are provided. In an apparatus for reproducing the moving picture, a moving picture feature section at a capture instruction time is determined as a capture section for audio data and video data decoded from the moving picture stream when a capture instruction is input while the moving picture stream is reproduced. Next, audio data and video data corresponding to the capture section among the audio data and the video data decoded from the moving picture stream are captured.

    Abstract translation: 提供了一种根据运动图像流的再现来捕获视频数据和音频数据的方法和装置。 在用于再现运动图像的装置中,当在运动图像流被再现时输入捕获指令时,捕获指令时间的运动图像特征部分被确定为用于从运动图像流解码的音频数据和视频数据的捕获部分 。 接下来,捕获与从运动图像流解码的音频数据和视频数据中的捕获部分对应的音频数据和视频数据。

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