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    Image sensor
    11.
    发明授权
    Image sensor 有权

    公开(公告)号：US11532654B2

    公开(公告)日：2022-12-20

    申请号：US16848208

    申请日：2020-04-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Kyungho Lee ,  Sungsoo Choi

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H03M1/56

    Abstract: An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

    IMAGE SENSOR CONTROLLING A CONVERSION GAIN, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME
    12.
    发明申请
    IMAGE SENSOR CONTROLLING A CONVERSION GAIN, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220224849A1

    公开(公告)日：2022-07-14

    申请号：US17711809

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungbin Yun ,  Hwanwoong Kim ,  Eunsub Shim ,  Kyungho Lee ,  Hongsuk Lee

    IPC: H04N5/355 ,  H04N5/343 ,  H04N5/369 ,  H04N5/374

    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

    IMAGE SENSOR, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME
    13.
    发明申请
    IMAGE SENSOR, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20210144315A1

    公开(公告)日：2021-05-13

    申请号：US16997234

    申请日：2020-08-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungbin YUN ,  Hwanwoong Kim ,  Eunsub Shim ,  Kyungho Lee ,  Hongsuk Lee

    IPC: H04N5/343 ,  H04N5/369 ,  H04N5/374

    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

    IMAGE SENSOR
    14.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210134865A1

    公开(公告)日：2021-05-06

    申请号：US16848208

    申请日：2020-04-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Kyungho Lee ,  Sungsoo Choi

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H03M1/56

    Abstract: An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

    IMAGE SENSOR
    17.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240006429A1

    公开(公告)日：2024-01-04

    申请号：US18121222

    申请日：2023-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub Shim ,  Jungchak Ahn

    IPC: H01L27/146 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79

    CPC classification number: H01L27/14612 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79 ,  H01L27/14645

    Abstract: An image sensor including: a first layer including a plurality of photodiodes arranged in a plurality of pixel regions in a first substrate, an optical region disposed on an upper surface of the first substrate, and an element region, wherein, in at least one of the plurality of pixel regions, the element region includes a first impurity region, a first transfer gate disposed between the first impurity region and the photodiode, a second impurity region isolated from the first impurity region, and a second transfer gate disposed between the second impurity region and the photodiode: and a second layer including a second substrate stacked with the first layer, wherein the second layer includes a first transistor connected to the first impurity region by a first contact, and a second transistor connected to the second impurity region by a second contact.

    Image sensor with a row driver including a transmission control signal generator
    18.
    发明授权
    Image sensor with a row driver including a transmission control signal generator 有权

    公开(公告)号：US11792549B2

    公开(公告)日：2023-10-17

    申请号：US17522021

    申请日：2021-11-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub Shim

    IPC: H04N25/766 ,  H01L27/146 ,  H04N25/778 ,  H04N25/779 ,  G06T3/00 ,  G06T3/40 ,  G06T7/80

    CPC classification number: H04N25/766 ,  G06T3/0018 ,  G06T3/4046 ,  G06T7/80 ,  H01L27/14616 ,  H04N25/778 ,  H04N25/779

    Abstract: An image sensor including: a pixel array including pixels each pixel including a photoelectric conversion element, a transmission transistor to transmit photocharges generated by the photoelectric conversion element to a floating diffusion node, and a reset transistor to reset the floating diffusion node based on a pixel power voltage; and a row driver to control the pixels, wherein the row driver includes a transmission control signal generator to provide a transmission control signal to the transmission transistor, wherein the transmission control signal generator includes: a first transistor to which a first voltage is applied; a second transistor connected to the first transistor; a third transistor to which a second voltage is applied, the second voltage being higher than the first voltage; and a fourth transistor connected to the third transistor, wherein an ON resistance of the second transistor is different from an ON resistance of the first transistor.

    Image sensor including DRAM capacitor and operating method thereof
    19.
    发明授权
    Image sensor including DRAM capacitor and operating method thereof 有权

    公开(公告)号：US11637980B2

    公开(公告)日：2023-04-25

    申请号：US17647515

    申请日：2022-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub Shim ,  Jungchak Ahn ,  Kyungho Lee

    IPC: H04N5/3745 ,  H04N5/355 ,  H04N5/378

    Abstract: An image sensor includes a pixel array having a plurality of pixels; a row driver providing the pixel array with a boosting signal; and a read-out circuit configured to read out pixel signals output from pixels of a row line selected by the row driver. Each of the plurality of pixels includes: a first photodiode; a transmission transistor connected to the first photodiode; a first floating diffusion node, a second floating diffusion node, and a third floating diffusion node, which are connected to the transmission transistor to accumulate charges generated by the first photodiode; an LCG capacitor connected to the third floating diffusion node to accumulate the charges generated by the first photodiode; an MCG transistor connected between the first floating diffusion node and the second floating diffusion node; and an LCG transistor connected to the third floating diffusion node.

    Image sensor with pixels including photodiodes sharing floating diffusion region
    20.
    发明授权
    Image sensor with pixels including photodiodes sharing floating diffusion region 有权

    公开(公告)号：US11381768B2

    公开(公告)日：2022-07-05

    申请号：US16852679

    申请日：2020-04-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub Shim ,  Kyungho Lee

    IPC: H04N5/347 ,  H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/349 ,  H04N9/04 ,  H04N5/378

    Abstract: An image sensor operating in multiple resolution modes including a low resolution mode and a high resolution mode includes a pixel array including a plurality of pixels, wherein each pixel in the plurality of pixels comprises a micro-lens, a first subpixel including a first photodiode, a second subpixel including a second photodiode, and the first subpixel and the second subpixel are adjacently disposed and share a floating diffusion region. The image sensor also includes a row driver providing control signals to the pixel array to control performing of an auto focus (AF) function, such that performing the AF function includes performing the AF function according to pixel units in the high resolution mode and performing the AF function according to pixel group units in the low resolution mode. A resolution corresponding to the low resolution mode is equal to or less than ¼ times a resolution corresponding to the high resolution mode.

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