公开(公告)号：US11910592B2

公开(公告)日：2024-02-20

申请号：US17702190

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Dongkwan Baek ,  Cheoljin Cho

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/34

Abstract: A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.

公开(公告)号：US11901291B2

公开(公告)日：2024-02-13

申请号：US17235369

申请日：2021-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheoljin Cho ,  Jungmin Park ,  Hanjin Lim ,  Jaehyoung Choi

IPC: H01L23/528 ,  H01L49/02

CPC classification number: H01L23/5283 ,  H01L28/60 ,  H01L28/75 ,  H01L28/90

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. The outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. In a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.