公开(公告)号：USRE48878E1

公开(公告)日：2022-01-04

申请号：US16592515

申请日：2019-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US10944943B2

公开(公告)日：2021-03-09

申请号：US16392916

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Kim ,  Byungjun Park

IPC: H04N9/04 ,  H04N5/374 ,  H04N5/357 ,  H04N5/378

Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

公开(公告)号：US20170287975A1

公开(公告)日：2017-10-05

申请号：US15630498

申请日：2017-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US09679935B2

公开(公告)日：2017-06-13

申请号：US14960449

申请日：2015-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Um ,  Byungjun Park ,  Jungchak Ahn

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: An image sensor may include a device isolation structure defining a plurality of pixel regions in a substrate and a photoelectric conversion element formed in each of the pixel regions. The device isolation structure may include an insulating gapfill layer extending from an upper portion to a lower portion of the device isolation structure, a spacer provided at the upper portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate, and a lower impurity region provided at the lower portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate.

公开(公告)号：US09524995B2

公开(公告)日：2016-12-20

申请号：US14191670

申请日：2014-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。