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公开(公告)号：US11699775B2
公开(公告)日：2023-07-11
申请号：US17138071
申请日：2020-12-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junhee Choi , Nakhyun Kim , Jinjoo Park , Joohun Han
IPC: H01L33/24 , H01L25/075 , H01L33/32 , H01L33/00
CPC classification number: H01L33/24 , H01L25/0753 , H01L33/32 , H01L33/0075
Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.
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公开(公告)号：US11466876B2
公开(公告)日：2022-10-11
申请号：US17117649
申请日：2020-12-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Juwan Park , Nakhyun Kim , Juyoung Kim , Changhyun Park , Moonsun Shin , Wonhee Lee , Hojin Lee , Changwoo Jung , Sunghyun Chun
Abstract: Disclosed herein is a humidifier including an improved structure of a water collection tank. The humidifier includes a main body, a water supply tank provided in an upper portion of the main body, a humidifying fabric arranged in an inside of the main body and disposed below the water supply tank to receive water, a fan configured to move air through the humidifying fabric, a water collection tank configured to collect water from the humidifying fabric, a pump configured to pump water from the water collection tank to the water supply tank, and a humidifier lower cover coupleable to and decoupleable from a lower end of the main body. The water collection tank includes a water collection tank top cover provided in an upper portion of the water collection tank, and a water collection tank lower cover configured to be accessible through the lower end of the main body.
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13.发明申请公开(公告)号：US20220140183A1
公开(公告)日：2022-05-05
申请号：US17197326
申请日：2021-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joohun HAN , Junhee Choi , Nakhyun Kim , Dongho Kim , Jinjoo Park
Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.
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公开(公告)号：US12100340B2
公开(公告)日：2024-09-24
申请号：US18233148
申请日：2023-08-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junhee Choi , Kiho Kong , Nakhyun Kim , Junghun Park , Jinjoo Park , Joohun Han
CPC classification number: G09G3/32 , H01L27/156 , H01L33/10 , H01L33/346 , G09G2300/0452
Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.
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15.发明授权公开(公告)号：US11527642B2
公开(公告)日：2022-12-13
申请号：US16826926
申请日：2020-03-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinjoo Park , Junhee Choi , Kiho Kong , Joohun Han , Nakhyun Kim , Junghun Park
IPC: H01L29/778 , H01L29/66 , H01L27/15 , H01L27/12
Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.
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Patent Agency Ranking
公开(公告)号：US11502218B2
公开(公告)日：2022-11-15
申请号：US16871214
申请日：2020-05-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nakhyun Kim , Junhee Choi , Kiho Kong , Deukseok Chung
Abstract: A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.
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公开(公告)号：US11430374B2
公开(公告)日：2022-08-30
申请号：US16857362
申请日：2020-04-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junhee Choi , Kiho Kong , Nakhyun Kim , Junghun Park , Jinjoo Park , Joohun Han
Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.
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公开(公告)号：US20210391499A1
公开(公告)日：2021-12-16
申请号：US17106515
申请日：2020-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nakhyun Kim , Junhee Choi , Jinjoo Park , Joohun Han
IPC: H01L33/24 , H01L25/16 , H01L29/06 , H01L33/32 , H01L25/075
Abstract: A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1. D1=D−(2×L1×tan β)
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公开(公告)号：US20210183301A1
公开(公告)日：2021-06-17
申请号：US16857362
申请日：2020-04-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junee CHOI , Kiho Kong , Nakhyun Kim , Junghun Park , Jinjoo Park , Joohun Han
Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.
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20.发明申请公开(公告)号：US20210104622A1
公开(公告)日：2021-04-08
申请号：US16826926
申请日：2020-03-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinjoo Park , Junhee Choi , Kiho Kong , Joohun Han , Nakhyun Kim , Junghun Park
IPC: H01L29/778 , H01L27/12 , H01L29/66
Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.
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