公开(公告)号：US10444884B2

公开(公告)日：2019-10-15

申请号：US15889340

申请日：2018-02-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sangwook Lee ,  Chang Ok Kim ,  SungHoon Yang ,  Junmo Im

IPC: G06F3/041 ,  H01L27/32 ,  H01L51/52 ,  G06F3/044

Abstract: A display device includes a display part that displays an image, a touch part on the display part, the touch part including a first conductive layer on the display part, a lower inorganic layer on the first conductive layer, an upper inorganic layer covering the lower inorganic layer and a second conductive layer on the upper inorganic layer. The upper inorganic layer includes substantially a same material as the lower inorganic layer. The upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer.

公开(公告)号：US09927896B2

公开(公告)日：2018-03-27

申请号：US14855830

申请日：2015-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sangwook Lee ,  Chang Ok Kim ,  SungHoon Yang ,  Junmo Im

IPC: G06F3/041 ,  H01L27/32 ,  H01L51/52 ,  G06F3/044

CPC classification number: G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111 ,  H01L27/323 ,  H01L51/5253

Abstract: A display device includes a display part that displays an image, a touch part on the display part, the touch part including a first conductive layer on the display part, a lower inorganic layer on the first conductive layer, an upper inorganic layer covering the lower inorganic layer and a second conductive layer on the upper inorganic layer. The upper inorganic layer includes substantially a same material as the lower inorganic layer. The upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer.

公开(公告)号：US20150144951A1

公开(公告)日：2015-05-28

申请号：US14257791

申请日：2014-04-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo-Na Kim ,  Hyeon Jun Lee ,  Chang Ok Kim ,  Yoon Ho Kim ,  Ki Seong Seo ,  Jung Yun Jo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/15 ,  H01L21/8234

CPC classification number: H01L21/02164 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02271 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided on the semiconductor layer and separated from each other, and the gate insulating layer includes a fluorinated silicon oxide (SiOF) layer, and the gate electrode, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor, and a threshold voltage shift value of the thin film transistor is substantially less than 4.9 V.

Abstract translation: 1.一种薄膜晶体管阵列面板，包括：绝缘基板，设置在所述绝缘基板上并包括栅电极的栅极线，设置在所述栅极线上的栅极绝缘层，设置在所述栅极绝缘层上的半导体层，以及源极 和设置在半导体层上并分离的漏电极，栅极绝缘层包括氟化氧化硅（SiOF）层，栅电极，半导体层，源电极和漏电极形成薄的 薄膜晶体管，并且薄膜晶体管的阈值电压偏移值基本上小于4.9V。