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公开(公告)号:US20210102084A1
公开(公告)日:2021-04-08
申请号:US17065939
申请日:2020-10-08
Applicant: Samsung Display Co., Ltd.
Inventor: Hyeyeon YANG , Shang Hyeun PARK , Shin Ae JUN
Abstract: An ink composition, including a quantum dot; a metal catalyst; an aromatic halide compound; an ene compound including at least one C—H moiety and a carbon-carbon unsaturated bond; and optionally, a metal oxide particle, wherein the metal catalyst is a metal salt, a metal coordination complex, or a combination thereof, wherein the metal catalyst comprises a metal that is palladium, nickel, ruthenium, rhodium, iridium, iron, cobalt, chromium, copper, platinum, silver, gold, or a combination thereof.
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公开(公告)号:US20210095200A1
公开(公告)日:2021-04-01
申请号:US17120531
申请日:2020-12-14
Inventor: Jinsuop YOUN , Ha Il KWON , Misun KIM , Jooyeon AHN , Hyeyeon YANG , Bumjin LEE , Jongmin LEE , Shin Ae JUN , Hyunjoo HAN
IPC: C09K11/70 , C09K11/02 , F21V8/00 , G02F1/1335
Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or TI) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or TI) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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13.
公开(公告)号:US20210009899A1
公开(公告)日:2021-01-14
申请号:US16918316
申请日:2020-07-01
Applicant: Samsung Display Co., Ltd.
Inventor: Nayoun WON , Garam PARK , Shin Ae JUN , Tae Gon KIM , Taekhoon KIM , Shang Hyeun PARK , Mi Hye LIM
Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
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14.
公开(公告)号:US20200369955A1
公开(公告)日:2020-11-26
申请号:US16881697
申请日:2020-05-22
Applicant: Samsung Display Co., Ltd.
Inventor: Shang Hyeun PARK , Tae Gon KIM , Shin Ae JUN
IPC: C09K11/02 , G03F7/20 , G03F7/32 , G03F7/38 , C08F212/08 , C08F220/06 , C08F220/18 , C08F220/28 , C08K5/37 , C08K3/22
Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.
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公开(公告)号:US20200217974A1
公开(公告)日:2020-07-09
申请号:US16825293
申请日:2020-03-20
Inventor: Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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16.
公开(公告)号:US20180142149A1
公开(公告)日:2018-05-24
申请号:US15819556
申请日:2017-11-21
Inventor: Jinsuop YOUN , Ha Il KWON , Misun KIM , Jooyeon AHN , Hyeyeon YANG , Bumjin LEE , Jongmin LEE , Shin Ae JUN , Hyunjoo HAN
IPC: C09K11/70 , C09K11/02 , G02F1/1335 , F21V8/00
CPC classification number: C09K11/70 , C09K11/025 , G02B6/0053 , G02B6/0073 , G02F1/133514 , G02F1/133617 , G02F2001/133614
Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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17.
公开(公告)号:US20180044586A1
公开(公告)日:2018-02-15
申请号:US15675251
申请日:2017-08-11
Inventor: Ha Il KWON , Tae Gon KIM , Jooyeon AHN , Nayoun WON , Shin Ae JUN , Eun Joo JANG
CPC classification number: C09K11/08 , C01P2004/03 , C01P2004/60 , C01P2004/62 , C09K11/025 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/502 , H01L2924/0001 , H01L2933/0033
Abstract: A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.
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18.
公开(公告)号:US20250002784A1
公开(公告)日:2025-01-02
申请号:US18755986
申请日:2024-06-27
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Garam PARK , Tae Gon KIM , Jooyeon AHN , Ji-Yeong KIM , Nayoun WON , Shin Ae JUN
IPC: C09K11/88 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/08 , G02F1/13357 , H10K50/115 , H10K59/12 , H10K59/38
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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19.
公开(公告)号:US20230303915A1
公开(公告)日:2023-09-28
申请号:US18190303
申请日:2023-03-27
Applicant: Samsung Display Co., Ltd.
Inventor: Shang Hyeun PARK , Tae Gon KIM , Shin Ae JUN
IPC: C09K11/02 , G03F7/20 , G03F7/32 , G03F7/38 , C08F212/08 , C08F220/06 , C08F220/28 , C08K5/37 , C08K3/22 , C08F220/18
CPC classification number: C09K11/02 , C08F212/08 , C08F220/06 , C08F220/1807 , C08F220/281 , C08K3/22 , C08K5/37 , G03F7/2002 , G03F7/32 , G03F7/38 , B82Y20/00 , C08K2003/2241
Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.
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公开(公告)号:US20210284907A1
公开(公告)日:2021-09-16
申请号:US17199613
申请日:2021-03-12
Applicant: Samsung Display Co., Ltd.
Inventor: Jooyeon AHN , Hyeyeon YANG , Tae Gon KIM , Jongmin LEE , Shin Ae JUN
Abstract: A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.
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