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公开(公告)号:US11386854B2
公开(公告)日:2022-07-12
申请号:US17266846
申请日:2019-06-25
Applicant: Samsung Display Co., Ltd.
Inventor: Gun-Hee Kim , Sang-Ho Park , Ju-Won Yoon , Seung-Chan Lee , Joo-Hee Jeon
IPC: G09G3/3291 , H01L27/32
Abstract: A pixel circuit includes: a driving switching element; a data initializer to initialize a voltage of a control electrode of the driving switching element; a data writer to write a data voltage to the driving switching element; an organic light emitting element; an organic light emitting element initializer to initialize an anode electrode of the organic light emitting element to a second initialization voltage based on an organic light emitting element initialization gate signal; and a light emitting controller to control an emission of the organic light emitting element. The organic light emitting element initializer includes: a control electrode to receive the organic light emitting element initialization gate signal; an input electrode to receive the second initialization voltage; an output electrode connected to the anode electrode; and a conductive layer to receive a compensation control signal that is different from the organic light emitting element initialization gate signal.
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公开(公告)号:US11056551B2
公开(公告)日:2021-07-06
申请号:US16556166
申请日:2019-08-29
Applicant: Samsung Display Co., Ltd.
Inventor: Hye-Hyang Park , Joo-Hee Jeon , Seung-Ho Jung , Chaun-Gi Choi , Hyeon-Sik Kim , Hui-Won Yang , Eun-Young Lee
Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.
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公开(公告)号:US10374022B2
公开(公告)日:2019-08-06
申请号:US15498250
申请日:2017-04-26
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung-Ho Jung , Chaun-Gi Choi , Young-Sik Yoon , Joo-Hee Jeon , Jung-Yun Jo
Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.
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公开(公告)号:US10332948B2
公开(公告)日:2019-06-25
申请号:US15498250
申请日:2017-04-26
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung-Ho Jung , Chaun-Gi Choi , Young-Sik Yoon , Joo-Hee Jeon , Jung-Yun Jo
Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.
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公开(公告)号:US10068923B2
公开(公告)日:2018-09-04
申请号:US15190919
申请日:2016-06-23
Applicant: Samsung Display Co., Ltd.
Inventor: Seung-Ho Jung , Chaun-Gi Choi , Hyeon-Sik Kim , Hye-Young Park , Hye-Hyang Park , Hui-Won Yang , Eun-Young Lee , Joo-Hee Jeon , Su-Kyoung Yang , Chan-Woo Yang
IPC: H01L27/12 , H01L29/786 , H01L27/32
Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.
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公开(公告)号:US09647045B2
公开(公告)日:2017-05-09
申请号:US14817632
申请日:2015-08-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung-Ho Jung , Chaun-Gi Choi , Young-Sik Yoon , Joo-Hee Jeon , Jung-Yun Jo
CPC classification number: H01L27/3258 , H01L27/3244 , H01L51/5281
Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.
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