公开(公告)号：US09425251B2

公开(公告)日：2016-08-23

申请号：US14278235

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Donghan Kang ,  Sunkwang Kim ,  Jaesik Kim ,  Hyeonsik Kim ,  Woonghee Jeong ,  Chaungi Choi

IPC: H01L29/06 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/06 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

Abstract translation: 公开了薄膜晶体管基板和有机发光二极管（OLED）显示器。 在一个方面，OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板，形成在基板上的源电极，形成在基板上并与源电极间隔开的漏电极，氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域，至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度，在与其第一端相对的第二端处具有第二宽度，并且第一宽度不同于第二宽度。

公开(公告)号：US20150129844A1

公开(公告)日：2015-05-14

申请号：US14278235

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Donghan Kang ,  Sunkwang Kim ,  Jaesik Kim ,  Hyeonsik Kim ,  Woonghee Jeong ,  Chaungi Choi

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L29/06 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

Abstract translation: 公开了薄膜晶体管基板和有机发光二极管（OLED）显示器。 在一个方面，OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板，形成在基板上的源电极，形成在基板上并与源电极间隔开的漏电极，氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域，至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度，在与其第一端相对的第二端处具有第二宽度，并且第一宽度不同于第二宽度。