SUBSTRATE HEAT TREATMENT APPARATUS AND METHOD
    11.
    发明申请
    SUBSTRATE HEAT TREATMENT APPARATUS AND METHOD 审中-公开
    基板热处理装置和方法

    公开(公告)号:US20160314988A1

    公开(公告)日:2016-10-27

    申请号:US15203524

    申请日:2016-07-06

    CPC classification number: H01L21/324 F27B17/0025 H01L21/67109 H01L21/67115

    Abstract: Substrate heat treatment apparatus and method are provided. According to an embodiment of the present invention, there is provided a substrate heat treatment apparatus including an inner shell configured to form a substrate housing space to house at least one substrate, an outer shell configured to cover the inner shell, and having at least one gas hole, and at least one heater configured to heat the substrate, wherein the at least one gas hole is configured to allow a first gas to be injected into a space between the inner shell and the outer shell.

    Abstract translation: 提供基板热处理装置和方法。 根据本发明的实施例,提供了一种基板热处理设备,其包括:内壳,其构造成形成用于容纳至少一个基板的基板容纳空间;外壳,构造成覆盖所述内壳,并且具有至少一个 气体孔和至少一个加热构造成加热基底的加热器,其中所述至少一个气孔被配置为允许第一气体被注入到所述内壳和所述外壳之间的空间中。

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