公开(公告)号：US20210327910A1

公开(公告)日：2021-10-21

申请号：US17157184

申请日：2021-01-25

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12

Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.

公开(公告)号：US20210111197A1

公开(公告)日：2021-04-15

申请号：US16906948

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon MOON ,  Tae Sang KIM ,  Joon Seok PARK ,  Myoung Hwa KIM ,  Hyung Jun KIM ,  Sang Woo SOHN ,  Hye Lim CHOI

IPC: H01L27/12

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US20240405025A1

公开(公告)日：2024-12-05

申请号：US18523961

申请日：2023-11-30

Applicant: Samsung Display Co., Ltd.

Inventor： Eok Su KIM ,  So Young KOO ,  Hyung Jun KIM

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: There is provided a thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate and including a channel area, a first conductive area connected to one side of the channel area, and a second conductive area connected to the other side of the channel area; a gate insulating layer covering areas other than the first conductive area and the second conductive area in the semiconductor layer; a gate electrode disposed on the gate insulating layer and overlapping the channel area in a plan view; and a first electrode disposed on the gate insulating layer on the one side of the channel area and in contact with a portion of the first conductive area. A first edge of the first electrode facing the gate electrode obliquely intersects a first edge of the gate insulating layer in a plan view.

公开(公告)号：US20240145655A1

公开(公告)日：2024-05-02

申请号：US18241999

申请日：2023-09-05

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  So Young KOO ,  Hyung Jun KIM ,  Geun Chul PARK

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1255 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A display device is disclosed that includes: a substrate; a first conductive layer disposed on the substrate; a first insulating layer positioned on the first conductive layer and having an undercut structure forming an opening; a first capacitor electrode including a portion formed in the undercut structure; a second capacitor electrode including a portion formed in the undercut structure and overlapping the second capacitor electrode to form a capacitor; and a second insulating layer including a portion formed in the undercut structure and positioned between the first capacitor electrode and the second capacitor electrode to function as a dielectric of the capacitor.

公开(公告)号：US20210249443A1

公开(公告)日：2021-08-12

申请号：US17109601

申请日：2020-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Joon Seok PARK ,  Jun Hyung LIM

IPC: H01L27/12

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

公开(公告)号：US20210056898A1

公开(公告)日：2021-02-25

申请号：US16850775

申请日：2020-04-16

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok PARK ,  Yeon Keon MOON ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Geun Chul PARK ,  Sang Woo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/32

Abstract: A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.

公开(公告)号：US20140021518A1

公开(公告)日：2014-01-23

申请号：US13717914

申请日：2012-12-18

Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  SAMSUNG DISPLAY CO., LTD. ,  ULSAN COLLEGE INDUSTRY COOPERATION

Inventor： Sang Youn HAN ,  Cheol Kyu KIM ,  Jun Ho SONG ,  Sung Hoon YANG ,  Kyung Tea PARK ,  Seung Mi SEO ,  Suk Won JUNG ,  Do Young KIM ,  Sun Jo KIM ,  Hyung Jun KIM

IPC: H01L31/18 ,  H01L27/144

CPC classification number: H01L31/1812 ,  H01L27/1443 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14679

Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Abstract translation: 一种显示装置，包括：第一基板; 第一基板上的光电晶体管; 以及连接到光电晶体管的开关晶体管。 所述光电晶体管包括在所述第一基板上的遮光膜，所述遮光膜上的与所述遮光膜接触的第一栅电极，所述第一栅电极上的与所述遮光膜重叠的第一半导体层， 源电极和第一半导体层上的第一漏电极。 开关晶体管包括在第一衬底上的第二栅极电极，在第二栅电极上的第二半导体层，并与第二栅电极重叠，第二源电极和第二漏电极在第二半导体层上。 第一半导体层和第二半导体层位于显示装置的相同层，并且各自包括晶体硅锗。

公开(公告)号：US20240128251A1

公开(公告)日：2024-04-18

申请号：US18395966

申请日：2023-12-26

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Yun Yong NAM ,  Jun Hyung LIM

IPC: H01L25/16 ,  H01L27/12

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L27/1259

Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

公开(公告)号：US20240040870A1

公开(公告)日：2024-02-01

申请号：US18230281

申请日：2023-08-04

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Jun Hyung LIM

IPC: H10K59/131 ,  H10K59/122

CPC classification number: H10K59/131 ,  H10K59/122 ,  H10K59/1201

Abstract: A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.

公开(公告)号：US20230253415A1

公开(公告)日：2023-08-10

申请号：US18193200

申请日：2023-03-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung Jin JEON ,  So Young KOO ,  Eok Su KIM ,  Hyung Jun KIM ,  Joon Seok PARK ,  Jun Hyung LIM

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1262 ,  H10K59/131

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.