公开(公告)号：US20210304672A1

公开(公告)日：2021-09-30

申请号：US17141808

申请日：2021-01-05

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM ,  Tae Wook KANG ,  Doo Na KIM ,  Han Bit KIM ,  Jae Seob LEE ,  Jae Hwan CHU

IPC: G09G3/3233 ,  H01L27/32 ,  H01L29/786

Abstract: Provided is a display device. The display device comprises a substrate, and a plurality of sub-pixels disposed on the substrate and including alight emitting element and a sub-pixel circuit driving the light emitting element. The sub-pixel circuit comprises a driving transistor controlling a driving current flowing through the light emitting element, a first transistor and a second transistor connected in series between a first node, which is a drain electrode of the driving transistor, and a second node, which is a gate electrode of the driving transistor, to receive the same scan signal, and a gate auxiliary electrode disposed on a gate electrode of the first transistor or the second transistor. The gate auxiliary electrode is connected to the gate electrode of the first transistor or the second transistor.

公开(公告)号：US20210150960A1

公开(公告)日：2021-05-20

申请号：US17038256

申请日：2020-09-30

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM ,  Tae Wook KANG ,  Hye Na KWAK ,  Doo Na KIM ,  Han Bit KIM ,  Bum Mo SUNG ,  Do Kyeong LEE ,  Yong Su LEE ,  Jae Hwan CHU

IPC: G09G3/20

Abstract: A display device includes: a pixel unit including a plurality of pixels; a scan driver having a plurality of stages and configured to supply a scan signal to the pixel unit; and a light emission control driver having a plurality of stages and configured to supply a light emission control signal to the pixel unit, wherein a first transistor of a plurality of transistors included in at least one of the stages of the scan driver or the stages of the light emission control driver comprises: an active layer pattern on a base layer, and including a channel region forming a channel, and first and second regions on opposite sides of the channel region; and a gate electrode spaced apart from the active layer pattern with a first insulating film therebetween, and overlapping the channel region.

公开(公告)号：US20130328042A1

公开(公告)日：2013-12-12

申请号：US13679910

申请日：2012-11-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo Hyoung LEE ,  Chan Woo YANG ,  Seung-Ho JUNG ,  Doo Na KIM ,  Bo Sung KIM ,  Eun Hye PARK ,  June Whan CHOI

IPC: H01L29/786 ,  H01B1/06 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），并且铟的摩尔比（R，R [mol％] = [In] / [In + Zn + Sn] / 100） （In）/ [In + Zn + Sn] / 100）的摩尔比（R，R [mol％] = [In] / [In + Zn + Sn] / 100）小于约20％ In）的半导体层中的金属为约5％至约13％。