公开(公告)号：US20220165984A1

公开(公告)日：2022-05-26

申请号：US17389271

申请日：2021-07-29

Applicant: Samsung Display Co., LTD.

Inventor： Nak Cho CHOI ,  Dong Hyun SON ,  Se Wan SON

IPC: H01L51/52 ,  H01L27/32

Abstract: A display device includes: a substrate on which a display area and a transmission area are defined; a metal blocking layer disposed in the display area on the substrate; an inorganic insulation layer disposed on the metal blocking layer; an organic insulation layer disposed on the inorganic insulation layer; a pixel defining layer disposed on the organic insulation layer, where an opening is defined through the pixel defining layer; an emission layer disposed on the organic insulation layer, and in the opening; a planarization layer disposed in the transmission area, on the organic insulation layer; and an encapsulation layer disposed in the display area and the transmission area. The inorganic insulation layer is at least partially removed in the transmission area, the organic insulation layer is disposed in the display area and the transmission area, and the planarization layer contacts a side surface of the pixel defining layer.

公开(公告)号：US20190252420A1

公开(公告)日：2019-08-15

申请号：US16273374

申请日：2019-02-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jun Hee LEE ,  Sung Hoon MOON ,  Dong Hyun SON ,  Pil Soo AHN ,  Kohei EBISUNO ,  Sang Hoon OH

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00

CPC classification number: H01L27/1262 ,  H01L27/3246 ,  H01L29/78603 ,  H01L51/0097 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

Abstract: A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.