公开(公告)号：US20210119184A1

公开(公告)日：2021-04-22

申请号：US17137842

申请日：2020-12-30

Applicant: Samsung Display Co., Ltd.

Inventor： Seong Min WANG ,  Jung Gun NAM ,  Byeong Hoon CHO ,  Mu Gyeom KIM

IPC: H01L51/52

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

公开(公告)号：US20160211310A1

公开(公告)日：2016-07-21

申请号：US14805533

申请日：2015-07-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seong Min WANG ,  Jung Gun NAM ,  Byeong Hoon CHO ,  Mu Gyeom KIM

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5284 ,  H01L27/3244 ,  H01L51/0097

Abstract: An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Abstract translation: 一种有机发光二极管显示装置，包括柔性基板; 像素包括有机发射层; 所述像素之间的像素定义层，所述像素限定层包括开口; 覆盖像素的封装层; 以及在封装层上的导电遮光构件，导电遮光构件不与像素重叠，并与像素定义层重叠。

公开(公告)号：US20140287542A1

公开(公告)日：2014-09-25

申请号：US14298766

申请日：2014-06-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Suk Won JUNG ,  Byeong Hoon CHO ,  Sung Hoon YANG ,  Woong Kwon KIM ,  Sang Youn HAN ,  Dae Cheol KIM ,  Ki-Hun JEONG ,  Kyung-Sook JEON ,  Seung Mi SEO ,  Jung-Suk BANG ,  Kun-Wook Han

IPC: H01L31/18

CPC classification number: H01L31/18 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/042 ,  H01L29/42384 ,  H01L29/78633

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract translation: 根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。