公开(公告)号：US20190252457A1

公开(公告)日：2019-08-15

申请号：US16270989

申请日：2019-02-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/30625 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

公开(公告)号：US20240170586A1

公开(公告)日：2024-05-23

申请号：US18426090

申请日：2024-01-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Frederic LALANNE ,  Pascal FONTENEAU

IPC: H01L31/02 ,  H01L27/146

CPC classification number: H01L31/02019 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L31/02005 ,  H01L27/14643

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.

公开(公告)号：US20230071932A1

公开(公告)日：2023-03-09

申请号：US17885960

申请日：2022-08-11

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Crolles 2) SAS

Inventor： Laurent SIMONY ,  Frederic LALANNE

IPC: H01L27/146

Abstract: An image sensor includes an array of pixels inside and on top of a substrate. A control circuit is configured to apply voltage potentials to the substrate. During a first phase, the control circuit applies a ground potential to the substrate. During a second phase, the control circuit applies a potential positive with respect to the ground potential to the substrate.

公开(公告)号：US20210344866A1

公开(公告)日：2021-11-04

申请号：US17372798

申请日：2021-07-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic LALANNE ,  Pierre MALINGE

IPC: H04N5/3745 ,  H04N5/353 ,  H04N5/378

Abstract: A pixel includes a photosensitive circuit, a sense node, a first transistor and a first capacitor. A first electrode of the first capacitor is connected to a control terminal of the first transistor. A second electrode of the first capacitor is to a node of application of a first control signal.

公开(公告)号：US20210193849A1

公开(公告)日：2021-06-24

申请号：US17125654

申请日：2020-12-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud TOURNIER ,  Boris RODRIGUES GONCALVES ,  Frederic LALANNE ,  Pascal FONTENEAU

IPC: H01L31/02 ,  H01L27/146

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.