公开(公告)号：US08907373B2

公开(公告)日：2014-12-09

申请号：US13628614

申请日：2012-09-27

Applicant: STMicroelectronics S.A.

Inventor： Philippe Galy ,  Jean Jimenez ,  Johan Bourgeat ,  Boris Heitz

IPC: H01L29/74 ,  H01L31/111 ,  H01L29/788 ,  H01L23/62 ,  H01L29/747 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/747

Abstract: A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a field-effect diode. The field-effect diode has a controlled gate that is connected to the gate of the MOS transistor.

Abstract translation: 保护装置包括三端双向可控硅开关元件和触发单元。 每个触发单元由配置成至少在混合操作模式中暂时操作的MOS晶体管和场效应二极管形成。 场效应二极管具有连接到MOS晶体管的栅极的受控栅极。

公开(公告)号：US09401351B2

公开(公告)日：2016-07-26

申请号：US14610173

申请日：2015-01-30

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/00 ,  H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract translation: 电子器件包括具有阳极，阴极，设置在阳极侧的第一双极晶体管的晶闸管。 第二双极晶体管设置在阴极侧。 这两个双极晶体管被嵌套并连接在阳极和阴极之间。 MOS晶体管耦合在第二双极晶体管的集电极区域和发射极区域之间。 晶体管具有通过并入第二双极晶体管的基极区的至少一部分的电阻半导体区连接到阴极的栅极区。

公开(公告)号：US09287254B2

公开(公告)日：2016-03-15

申请号：US14599167

申请日：2015-01-16

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat

IPC: H02H9/00 ,  H01L27/02 ,  H01L27/12 ,  H01L27/06 ,  H01L29/74 ,  H01L29/747

CPC classification number: H01L27/0248 ,  H01L27/0262 ,  H01L27/0623 ,  H01L27/1203 ,  H01L29/7436 ,  H01L29/747

Abstract: An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors. A gate region is common to all the MOS transistors and a semiconductor substrate region includes the substrates of all the MOS transistors.

Abstract translation: 电子设备包括第一设备终端和第二设备终端。 第一和第二晶闸管反向连接在两个器件端子之间。 第一和第二MOS晶体管分别耦合在两个晶闸管的两个NPN晶体管的导通电极（发射极和集电极）之间。 第三MOS晶体管耦合在两个晶闸管的两个NPN双极晶体管的发射极之间，第四个MOS晶体管耦合在两个晶闸管的两个PNP双极晶体管的基极之间。 栅极区域对于所有MOS晶体管是公共的，并且半导体衬底区域包括所有MOS晶体管的衬底。

公开(公告)号：US20150214214A1

公开(公告)日：2015-07-30

申请号：US14610173

申请日：2015-01-30

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract translation: 电子器件包括具有阳极，阴极，设置在阳极侧的第一双极晶体管的晶闸管。 第二双极晶体管设置在阴极侧。 这两个双极晶体管被嵌套并连接在阳极和阴极之间。 MOS晶体管耦合在第二双极晶体管的集电极区域和发射极区域之间。 晶体管具有通过并入第二双极晶体管的基极区的至少一部分的电阻半导体区连接到阴极的栅极区。