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11.发明授权公开(公告)号：US11210208B2
公开(公告)日：2021-12-28
申请号：US16162821
申请日：2018-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dae-Jeong Kim , Jiseok Kang , Tae-Kyeong Ko , Sung-Joon Kim , Wooseop Kim , Chanik Park , Wonjae Shin , Yongjun Yu , Insu Choi
Abstract: A memory system includes a nonvolatile memory module and a first controller configured to control the nonvolatile memory module. The nonvolatile memory module includes a volatile memory device, a nonvolatile memory device, and a second controller configured to control the volatile memory device and the nonvolatile memory device. The first controller may be configured to transmit a read request to the second controller. When, during a read operation according to the read request, normal data is not received from the nonvolatile memory device, the first controller may perform one or more retransmits of the read request to the second controller without a limitation on a number of times that the first controller performs the one or more retransmits of the read request.
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公开(公告)号：US10884655B2
公开(公告)日：2021-01-05
申请号：US16386645
申请日：2019-04-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minsu Kim , Tae-Kyeong Ko , Dae-Jeong Kim , Do-Han Kim , Sung-Joon Kim , Wonjae Shin , Kwanghee Lee , Changmin Lee , Insu Choi
IPC: G06F3/06 , G06F12/0891 , G06F12/1009 , G06F12/02
Abstract: A storage module includes a dynamic random access memory (DRAM) device, a nonvolatile memory device, and a high-speed buffer memory. An method of operating the storage module includes copying target data stored in the nonvolatile memory device to the high-speed buffer memory in response to an external device entering a page fault mode, receiving a first refresh command from the external device, and, in response to the first refresh command, performing a first refresh operation associated with the DRAM device and moving the target data copied to the high-speed buffer memory to the DRAM device during a first refresh reference time.
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