公开(公告)号：US20130306966A1

公开(公告)日：2013-11-21

申请号：US13721635

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-baek SEON ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Kyoung-seok SON ,  Sang-yoon LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/2206 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。

公开(公告)号：US20150062475A1

公开(公告)日：2015-03-05

申请号：US14453137

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eok-su KIM ,  Myung-kwan RYU ,  Kyoung-seok SON ,  Sung-hee LEE

IPC: H01L29/786 ,  G02F1/133 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0426 ,  H01L29/4908 ,  H01L29/78645

Abstract: A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

Abstract translation: 公开了一种薄膜晶体管（TFT）及其驱动方法。 TFT包括：有源层; 底栅电极，其设置在所述有源层下方，以驱动所述有源层的第一区域; 以及设置在有源层上以驱动有源层的第二区域的顶栅电极。 TFT通过使用底栅电极和顶栅电极来控制有源层的导电性。

公开(公告)号：US20140363932A1

公开(公告)日：2014-12-11

申请号：US14187889

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-kwan RYU ,  Tae-sang KIM ,  Hyun-suk KIM ,  Joon-seok PARK ,  Young-soo PARK

IPC: H01L29/66 ,  C23C14/34

CPC classification number: C23C14/3414 ,  C23C14/0057 ,  C23C14/0641 ,  C23C14/0676 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate.

Abstract translation: 提供含氟锌靶，通过使用锌靶制造氮氧化锌薄膜的方法，以及通过使用氮氧化锌薄膜制造薄膜晶体管的方法。 所述方法包括在溅射室中安装含氟锌靶和基板，向溅射室供给氮气和惰性气体，并在基板上形成含氟的氮氧化锌薄膜。

公开(公告)号：US20140291664A1

公开(公告)日：2014-10-02

申请号：US14043324

申请日：2013-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-baek SEON ,  Myung-kwan RYU ,  Sang-yoon LEE

IPC: H01L29/12

CPC classification number: H01L29/7869 ,  H01B1/06 ,  H01B1/08 ,  H01L29/78693

Abstract: A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Abstract translation: 用于形成氧化物半导体的溶液组合物包括金属氧化物前体和硫代乙酸金属及其衍生物之一。

公开(公告)号：US20130248851A1

公开(公告)日：2013-09-26

申请号：US13779355

申请日：2013-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek SEON ,  Myung-kwan RYU ,  Kyung-Bae PARK ,  Sang-yoon LEE ,  Bon-Won KOO

IPC: H01L29/12

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。