公开(公告)号：US10741607B2

公开(公告)日：2020-08-11

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US20200066778A1

公开(公告)日：2020-02-27

申请号：US16661346

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378 ,  H01L27/30

Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

公开(公告)号：US10109664B2

公开(公告)日：2018-10-23

申请号：US15607958

申请日：2017-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Gyu Baek ,  Sang Hoon Uhm ,  Tae Yon Lee ,  Jae Sung Hur

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.