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公开(公告)号:US20190181211A1
公开(公告)日:2019-06-13
申请号:US16175753
申请日:2018-10-30
Applicant: Samsung Display Co., Ltd.
Inventor: Han Sung BAE , Se Ho KIM , Sun Ja KWON , Dong Wook KIM , Jun Yong AN , Sang Moo CHOI , Jun Won CHOI
IPC: H01L27/32 , H01L51/00 , G09G3/3266 , G09G3/3225
Abstract: A display device, includes: a display area including an upper side, a lower side, a left side, a right side, and inclined corner portions where the upper, lower, left, and right sides meet; a demultiplexing circuit unit adjacent to the lower side of the display area and the corner portion connected thereto; and a scan transmission line which extends toward the display area from an outer side of the left side and overlaps with the demultiplexing circuit unit outside the corner portion, wherein the demultiplexing circuit unit includes a demultiplexer transistor, and the scan transmission line is formed of a different conductive layer from an electrode of a demultiplexer transistor.
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12.
公开(公告)号:US20180006099A1
公开(公告)日:2018-01-04
申请号:US15619662
申请日:2017-06-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Ji Hyun KA , Han Sung BAE , Won Kyu KWAK
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2300/0814 , G09G2300/0819 , G09G2300/0861 , G09G2310/0248 , G09G2310/0286 , G09G2310/061 , G09G2310/08 , H01L27/1222 , H01L27/1225 , H01L27/3248 , H01L27/3276
Abstract: A pixel includes a pixel circuit and an organic light emitting diode. The pixel circuit has first, second, third, and fourth transistors. The first transistor controls an amount of current flowing from a first driving power supply coupled to a first node to a second driving power supply through the organic light emitting diode. The turns on when a scan signal is supplied to a first scan line. The third transistor turns on when a scan signal is supplied to a second scan line. The fourth transistor turns on when a scan signal is supplied to a third scan line. The first transistor is a p-type Low Temperature Poly-Silicon thin film transistor and the third transistor and the fourth transistor are n-type oxide semiconductor thin film transistors.
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