公开(公告)号：US10692878B2

公开(公告)日：2020-06-23

申请号：US16552524

申请日：2019-08-27

Applicant: Renesas Electronics Corporation

Inventor： Tsutomu Okazaki ,  Akira Kato ,  Kan Yasui ,  Kyoya Nitta ,  Digh Hisamoto ,  Yasushi Ishii ,  Daisuke Okada ,  Toshihiro Tanaka ,  Toshikazu Matsui

IPC: H01L27/1157 ,  H01L27/105 ,  H01L29/423 ,  H01L21/28 ,  G11C16/04 ,  H01L27/02 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/66 ,  H01L29/792 ,  H01L29/06 ,  H01L29/51

Abstract: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

公开(公告)号：US10141324B2

公开(公告)日：2018-11-27

申请号：US15581576

申请日：2017-04-28

Applicant: Renesas Electronics Corporation

Inventor： Tsutomu Okazaki ,  Daisuke Okada ,  Kyoya Nitta ,  Toshihiro Tanaka ,  Akira Kato ,  Toshikazu Matsui ,  Yasushi Ishii ,  Digh Hisamoto ,  Kan Yasui

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H01L27/1157 ,  H01L29/51 ,  H01L27/02 ,  H01L21/28

Abstract: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.