公开(公告)号：US10341591B2

公开(公告)日：2019-07-02

申请号：US15446545

申请日：2017-03-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji Hirase ,  Yoshihiro Sato ,  Yoshinori Takami ,  Masayuki Takase ,  Masashi Murakami

IPC: H04N5/359 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H01L27/146 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

公开(公告)号：US10141354B2

公开(公告)日：2018-11-27

申请号：US14876500

申请日：2015-10-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki Takase ,  Takayoshi Yamada ,  Tokuhiko Tamaki

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/378 ,  H04N5/353 ,  H01L27/30

Abstract: An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.

公开(公告)号：US09602743B2

公开(公告)日：2017-03-21

申请号：US14878180

申请日：2015-10-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takayoshi Yamada ,  Masayuki Takase ,  Tokuhiko Tamaki ,  Masashi Murakami

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/357 ,  H04N5/359 ,  H04N5/378 ,  H04N5/361

CPC classification number: H04N5/359 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14667 ,  H04N5/23232 ,  H04N5/265 ,  H04N5/357 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.

公开(公告)号：US10580808B2

公开(公告)日：2020-03-03

申请号：US16006478

申请日：2018-06-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki Takase ,  Sanshiro Shishido

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/378

Abstract: A photodetection device includes: a photoelectric converter generating charge; a first diffusion region having a first end connected to the photoelectric converter and a second end and extending in a first direction from the first end toward the second end; a second diffusion region having a third end connected to a first side surface, of the first diffusion region, which is along the first direction and a fourth end and extending in a second direction from the third end toward the fourth end; a first charge accumulator connected to the fourth end; a first gate electrode covering at least part of the first diffusion region; and a second gate electrode covering at least part of the second diffusion region. The second gate electrode covers a first portion of the first diffusion region without the first gate electrode intervention. The first portion is adjacent to the second diffusion region.