公开(公告)号：US11056309B2

公开(公告)日：2021-07-06

申请号：US16348800

申请日：2017-11-27

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  C23C14/18 ,  C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L21/04 ,  H01L29/32 ,  H01L21/265

Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.