公开(公告)号：US20250087972A1

公开(公告)日：2025-03-13

申请号：US18727587

申请日：2023-01-23

Applicant: Lumentum Operations LLC

Inventor： Matthew Glenn PETERS ,  Jun YANG

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/183

Abstract: In some implementations, an optical emitter includes a substrate with a surface that is off-cut relative to an orientation of a crystallographic plane of the substrate; a first set of layers disposed on the substrate and forming an active region of a light emitting junction, wherein the first set of layers includes a gallium-arsenic-nitrogen (GaAsN) material layer, wherein the GaAsN material layer forms a quantum well barrier, wherein the first set of layers further includes an indium-gallium-arsenic-nitrogen-antimony (InGaAsNSb) layer, wherein the InGaAsNSb layer is a strained, dilute nitride InGaAsNSb layer forming a quantum well; and a second set of layers forming a first distributed Bragg reflector (DBR) and a second DBR, wherein the active region is disposed between the first DBR and the second DBR.

公开(公告)号：US20230238775A1

公开(公告)日：2023-07-27

申请号：US17654716

申请日：2022-03-14

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Matthew Glenn PETERS ,  Guowei ZHAO ,  Benjamin KESLER ,  Eric R. HEGBLOM

IPC: H01S5/183 ,  H01S5/34

CPC classification number: H01S5/18397 ,  H01S5/18361 ,  H01S5/3416 ,  H01S5/18311 ,  H01S5/18305

Abstract: A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.

公开(公告)号：US20220385041A1

公开(公告)日：2022-12-01

申请号：US17305778

申请日：2021-07-14

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Eric R. HEGBLOM ,  Guowei ZHAO ,  Matthew Glenn PETERS

IPC: H01S5/183 ,  H01S5/34

Abstract: In some implementations, an emitter may include a substrate and a set of layers on the substrate. The set of layers may include a first mirror, a second mirror that includes a partial reflector and an additional layer, and at least one active region between the first mirror and the second mirror. A first reflectivity of the second mirror at a lateral center of the second mirror may be different than a second reflectivity of the second mirror at a lateral edge of the second mirror.