公开(公告)号：US20210367404A1

公开(公告)日：2021-11-25

申请号：US17030782

申请日：2020-09-24

Applicant: Lumentum Operations LLC

Inventor： Benjamin KESLER

IPC: H01S5/183 ,  H01S5/34 ,  H01S5/042

Abstract: A vertical cavity surface emitting laser (VCSEL) may include an epitaxial structure that includes a first active layer, a second active layer, and a tunnel junction therebetween. The VCSEL may include a set of contacts that are electrically connected to the epitaxial structure. The set of contacts may include three or more contacts, and the set of contacts may be electrically separated from each other on the VCSEL. At least one contact, of the set of contacts, may be electrically connected to the epitaxial structure at a depth between the first active layer and the second active layer.

公开(公告)号：US20250030223A1

公开(公告)日：2025-01-23

申请号：US18498760

申请日：2023-10-31

Applicant: Lumentum Operations LLC

Inventor： Mahdad MANSOUREE ,  Benjamin KESLER

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42

Abstract: In some implementations, an optical system may include an optical emitter configured to emit a beam, wherein the optical emitter is a vertical cavity surface emitting laser (VCSEL), and wherein the VCSEL is a top-emitting VCSEL or a bottom-emitting VCSEL. The optical system may include a liquid crystal component, the liquid crystal component being disposed on a surface of the optical emitter. The optical system may include a control component.

公开(公告)号：US20250007245A1

公开(公告)日：2025-01-02

申请号：US18545901

申请日：2023-12-19

Applicant: Lumentum Operations LLC

Inventor： Richa DUBEY ,  Eric R. HEGBLOM ,  Benjamin KESLER ,  Matthew Glenn PETERS

IPC: H01S5/183

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include a first mirror structure over a cavity region. The VCSEL may include a grating associated with polarizing light emitted by the VCSEL. The grating may be over the first mirror structure. The VCSEL may include a mode filter (MF) structure over the grating. The MF structure may comprise an MF layer in a first region of the MF structure to at least partially suppress a higher order transverse mode (HOM) of the light, the MF layer comprising a dielectric layer. The MF structure may include a second minor structure in at least a second region of the MF structure to increase reflectivity on a side of the VCSEL comprising the first minor structure.

公开(公告)号：US20240396297A1

公开(公告)日：2024-11-28

申请号：US18362569

申请日：2023-07-31

Applicant: Lumentum Operations LLC

Inventor： Siu Kwan CHEUNG ,  Lijun ZHU ,  Qianhuan YU ,  Benjamin KESLER ,  Wei SHI ,  Joseph LEIGH

IPC: H01S5/042 ,  H01S5/42

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) device. The VCSEL device may include a substrate. The VCSEL device may include a plurality of VCSELs on the substrate. The VCSEL device may include at least one anode layer on the substrate and electrically connected to the plurality of VCSELs. The VCSEL device may include a cathode electrode over at least a portion of multiple VCSELs, of the plurality of VCSELs, and electrically connected to the multiple VCSELs. The cathode electrode may include multiple cathode electrode fingers. The emitter assembly may include a bridge element that electrically connects a first finger of the multiple cathode electrode fingers and a second finger of the multiple cathode electrode fingers.

公开(公告)号：US20220140573A1

公开(公告)日：2022-05-05

申请号：US17648012

申请日：2022-01-14

Applicant: Lumentum Operations LLC

Inventor： Benjamin KESLER ,  Ajit Vijay BARVE ,  Guowei ZHAO

IPC: H01S5/42 ,  H01L21/02

Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.