公开(公告)号：US5096844A

公开(公告)日：1992-03-17

申请号：US398368

申请日：1989-08-24

Applicant: Ulf Konig ,  Klaus Worner ,  Erich Kasper

Inventor： Ulf Konig ,  Klaus Worner ,  Erich Kasper

IPC: H01L21/20 ,  H01L21/285 ,  H01L21/331

CPC classification number: H01L29/66287 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/28525 ,  H01L29/66242 ,  Y10S438/969

Abstract: The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.

Abstract translation: 本发明涉及一种特别用于制造双极晶体管的方法。 通过应用选择性外延方法和使用自调整技术，缩短了工艺顺序，提高了晶体管性能。

公开(公告)号：US5003364A

公开(公告)日：1991-03-26

申请号：US70572

申请日：1987-07-07

Applicant: Erich Kasper ,  Gerhard Kohlbacher ,  Peter Nothaft

Inventor： Erich Kasper ,  Gerhard Kohlbacher ,  Peter Nothaft

IPC: H01L27/148

CPC classification number: H01L27/14875

Abstract: The invention relates to CCD Si detector configuration with a semiconductor sensibilizator. The spectral range of the detectors extends from 0.4 .mu.m to 1.6 .mu.m. The CCD Si detector configuration is produced as integrated structure so that a large picture element number can be achieved. The semiconductor layer sequence of the semiconductor sensibilizator is grown using differential molecular beam epitaxial growth techniques.

Abstract translation: 本发明涉及具有半导体敏感剂的CCD Si检测器配置。 检测器的光谱范围从0.4亩延伸至1.6亩。 产生CCD Si检测器结构作为集成结构，从而可以实现大的像素数。 使用差分分子束外延生长技术生长半导体敏化剂的半导体层序列。

公开(公告)号：US4949146A

公开(公告)日：1990-08-14

申请号：US941225

申请日：1986-12-12

Applicant: Hans J. Herzog ,  Klaus Worner ,  Erich Kasper

Inventor： Hans J. Herzog ,  Klaus Worner ,  Erich Kasper

IPC: H01L21/20 ,  H01L21/203 ,  H01L21/763

CPC classification number: H01L21/763 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  Y10S438/969

Abstract: A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to delimit monocrystalline silicon semiconductor regions and/or structures to prevent undesirable current flow.

Abstract translation: 基于硅衬底的结构化半导体本体，例如集成电路或晶体管，其具有包含多晶硅的阻挡区域，优选通过硅MBE工艺制造。 需要阻挡区域限定单晶硅半导体区域和/或结构以防止不期望的电流流动。