公开(公告)号：US20050195399A1

公开(公告)日：2005-09-08

申请号：US11067961

申请日：2005-02-28

Applicant: Lena Nicolaides ,  Mira Bakshi ,  Alex Salnik ,  Jon Opsal

Inventor： Lena Nicolaides ,  Mira Bakshi ,  Alex Salnik ,  Jon Opsal

IPC: G01N21/55

CPC classification number: G01N21/171 ,  H01L22/12

Abstract: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

Abstract translation: 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间，可以显着降低噪声量，从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行，以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估，解决与损伤弛豫或不完全退火有关的不确定性，可以在远离TW测量箱的距离处执行退火衰减因子（ADF）表征。 从ADF测量和晶片响应的空间平均测量，可以获得晶片工艺的可重复评估。

公开(公告)号：US06931361B2

公开(公告)日：2005-08-16

申请号：US10877397

申请日：2004-06-25

Applicant: Jon Opsal ,  Hanyou Chu

Inventor： Jon Opsal ,  Hanyou Chu

IPC: G01B11/02 ,  G01B11/24 ,  G01N21/21 ,  G01N21/27 ,  G03F7/20 ,  G06F17/00 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/211 ,  G03F7/705 ,  G03F7/70625

Abstract: A system for characterizing periodic structures formed on a sample on a real time basis is disclosed. A spectroscopic measurement module generates output signals as a function of wavelength. The output signals are supplied to a processor for evaluation, which creates an initial theoretical model having a rectangular structure. The processor calculates the theoretical optical response of that sample, which is compared to normalized measured values at each of a plurality of wavelengths. The model configuration is then modified to be closer to the actual measured structure. The processor recalculates the optical response and compares the result to the normalized data. This process is repeated in an iterative manner until a best fit rectangular shape is obtained. Thereafter, the complexity of the model is iteratively increased, and model is iteratively fit to the data until a best fit model is obtained which is similar to the periodic structure.

Abstract translation: 公开了一种用于表征实时地在样品上形成的周期性结构的系统。 光谱测量模块产生作为波长的函数的输出信号。 将输出信号提供给用于评估的处理器，这产生具有矩形结构的初始理论模型。 处理器计算该样本的理论光学响应，其与多个波长中的每个波长处的归一化测量值进行比较。 然后将模型配置修改为更接近实际测量结构。 处理器重新计算光学响应，并将结果与​​归一化数据进行比较。 以迭代的方式重复该过程，直到获得最佳拟合的矩形形状。 此后，模型的复杂性被迭代地增加，并且模型迭代地适合数据，直到获得类似于周期性结构的最佳拟合模型。

公开(公告)号：US20050162654A1

公开(公告)日：2005-07-28

申请号：US11083301

申请日：2005-03-17

Applicant: Jon Opsal ,  Li Chen

Inventor： Jon Opsal ,  Li Chen

IPC: G01B11/06 ,  G01N21/17 ,  G01N21/21 ,  G01N21/27 ,  G01N21/00

CPC classification number: G01N21/211 ,  G01N21/1717

Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

公开(公告)号：US20050041250A1

公开(公告)日：2005-02-24

申请号：US10319189

申请日：2002-12-13

Applicant: Jon Opsal

Inventor： Jon Opsal

IPC: G01B11/06 ,  G01N21/21 ,  G01N21/84 ,  G01J4/00

CPC classification number: G01N21/211 ,  G01B11/0641 ,  G01N21/8422 ,  G01N2021/213

Abstract: An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. A polarizer is used to impart a known polarization state to the probe beam and the polarized probe beam is directed against the sample at a shallow angle of incidence. A rotating compensator is used to impart phase retardations to the polarization state of the reflected probe beam. After passing through the compensator, the probe beam passes through a second polarizer (analyzer). After leaving the analyzer, the probe beam is received by a detector. The detector translates the received probe beam into a signal that includes DC, 2ω and 4ω signal components (where ω is the angular velocity of the rotating compensator). A processor analyzes the signal using the DC, 2ω and 4ω components allowing simultaneous evaluation of both critical dimensions and film parameters.

Abstract translation: 椭偏仪包括用于产生用于与样品相互作用的多色光的探测光束的光源。 使用偏振器将已知的偏振状态赋予探测光束，并且偏振探测光束以较小的入射角度对准样品。 使用旋转补偿器将相位延迟赋予反射的探测光束的偏振状态。 探测光束通过补偿器后通过第二个偏振器（分析仪）。 离开分析仪后，探测器被探测器接收。 检测器将接收的探测器转换成包括DC，2omega和4omega信号分量（其中ω是旋转补偿器的角速度）的信号。 处理器使用DC，2omega和4omega组件分析信号，从而同时评估关键尺寸和胶片参数。

公开(公告)号：US06831743B2

公开(公告)日：2004-12-14

申请号：US10653306

申请日：2003-09-02

Applicant: David E. Aspnes ,  Jon Opsal

Inventor： David E. Aspnes ,  Jon Opsal

IPC: G01J400

CPC classification number: G01J3/02 ,  G01J3/0229 ,  G01J3/0232 ,  G01N21/211 ,  G01N2021/213

Abstract: An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135° to 225°, and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously. A processor determines the polarization state of the beam as it impinges the analyzer from the light intensities measured by the detector.

公开(公告)号：US06829057B2

公开(公告)日：2004-12-07

申请号：US10658176

申请日：2003-09-09

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B1114

CPC classification number: G01B11/024 ,  G01B11/02 ,  G01B11/14 ,  G03F7/70625

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.

公开(公告)号：US06774997B2

公开(公告)日：2004-08-10

申请号：US10395746

申请日：2003-03-24

Applicant: Allan Rosencwaig ,  Jon Opsal

Inventor： Allan Rosencwaig ,  Jon Opsal

IPC: G01J400

CPC classification number: G01B11/0641

Abstract: An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.

Abstract translation: 公开了一种用于评估具有多层薄膜叠层的样品的光学测量系统。 光学测量系统包括参考椭偏仪和一个或多个非接触光学测量装置。 参考椭偏仪用于校准其他光学测量装置。 一旦校准完成，该系统可用于分析多层薄膜堆叠。 特别地，参考椭偏仪提供可用于确定叠层的总光学厚度的测量。 使用与其他光学测量装置的测量结合的信息，可以获得关于各个层的更准确的信息。

公开(公告)号：US06535285B1

公开(公告)日：2003-03-18

申请号：US09499974

申请日：2000-02-08

Applicant: Jon Opsal ,  Minna Hovinen

Inventor： Jon Opsal ,  Minna Hovinen

IPC: G01J400

CPC classification number: G01N21/1717 ,  G01N21/211

Abstract: A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.

Abstract translation: 公开了一种能够在半导体晶片上获得热波和光谱测量的组合计量工具。 在优选实施例中，主要组合包括热波测量和光谱椭偏测量。 这些测量用于表征在大剂量范围内的半导体中的离子注入过程。

公开(公告)号：US06532070B1

公开(公告)日：2003-03-11

申请号：US09884262

申请日：2001-06-19

Applicant: Minna Hovinen ,  Jon Opsal

Inventor： Minna Hovinen ,  Jon Opsal

IPC: G01N2141

CPC classification number: G01N21/211 ,  G01N21/171

Abstract: A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.

公开(公告)号：US06465265B2

公开(公告)日：2002-10-15

申请号：US09804765

申请日：2001-03-13

Applicant: Jon Opsal ,  Jingmin Leng

Inventor： Jon Opsal ,  Jingmin Leng

IPC: H01L2166

CPC classification number: H01L22/20 ,  G01N21/211

Abstract: A method is described for analyzing and characterizing parameters of a semiconductor wafer. In particular, an approach is described for characterizing the interface layer between a thin oxide film and a silicon substrate in order to more accurately determine the characteristics of the sample. The wafer is inspected and a set of measured data is created. This measured data is compared with theoretical data generated based on a theoretical set of parameters as applied to a model representing the physical structure of the semiconductor. The model includes an interface layer, between the film layer and the silicon substrate, which includes a representation of the electronic structure of the underlying substrate. In the preferred embodiment, the representation is a five peak, critical point model influenced by the electronic transitions of the underlying silicon substrate. An error minimization algorithm, such as a least squares fitting routine, is used to modify the theoretical parameters until the differences between the measured data and the theoretically derived data is minimized.

Abstract translation: 描述了用于分析和表征半导体晶片的参数的方法。 特别地，描述了用于表征薄氧化膜和硅衬底之间的界面层的方法，以便更准确地确定样品的特性。 检查晶片并创建一组测量数据。 将该测量数据与应用于表示半导体物理结构的模型的理论参数组合产生的理论数据进行比较。 该模型包括在膜层和硅衬底之间的界面层，其包括下面衬底的电子结构的表示。 在优选实施例中，该表示是受下游硅衬底的电子跃迁影响的五峰临界点模型。 使用诸如最小二乘拟合程序的误差最小化算法来修改理论参数，直到测量数据与理论推导数据之间的差异最小化。