公开(公告)号：US20140151771A1

公开(公告)日：2014-06-05

申请号：US13965781

申请日：2013-08-13

Applicant: International Business Machines Corporation

Inventor： Ching-Tzu Chen ,  Marcin J. Gajek ,  Simone Raoux

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/024 ,  C23C14/08 ,  C23C14/225 ,  C23C14/35 ,  H01L29/1606 ,  H01L29/40111 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66075 ,  H01L29/66984 ,  H01L29/78618 ,  H01L29/78684

Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.