公开(公告)号：US10403676B2

公开(公告)日：2019-09-03

申请号：US15562001

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Noburo Hosokawa ,  Nao Inoue ,  Katsumi Shibayama

IPC: H01L27/146 ,  H01L23/00 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/103 ,  H01L23/48 ,  H01L31/0224 ,  H01L31/0203

Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.