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公开(公告)号：US20190165863A1
公开(公告)日：2019-05-30
申请号：US15855825
申请日：2017-12-27
Inventor： O-Kyun KWON , Namje KIM , Miran PARK , Shinmo AN , Won Seok HAN
IPC: H04B10/54 , H04B10/2575
Abstract: An optical signal generating apparatus according to an embodiment of the inventive concept includes a first optical intensity modulator for modulating a first optical signal to generate a 2N-level (where N is a positive integer) second optical signal in the form of a binary signal, a first optical amplifier for amplifying the second optical signal to generate a third optical signal, and a second optical intensity modulator for modulating the third optical signal to generate a 2N+1-level fourth optical signal in the form of a binary signal. The optical signal generating apparatus according to an embodiment of the inventive concept may generate a low-cost, high-quality optical signal by using an optical device to generate a multi-level optical signal. Additionally, the optical signal generating apparatus according to an embodiment of the inventive concept may generate a multi-level optical signal by sequentially performing optical modulation and optical amplification operations.
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Patent Agency Ranking
公开(公告)号：US20170243999A1
公开(公告)日：2017-08-24
申请号：US15434718
申请日：2017-02-16
Inventor： Jae-hyung WI , Yong-Duck CHUNG , Woo Jung LEE , Daehyung CHO , Won Seok HAN
IPC: H01L31/0725 , H01L31/0224 , H01L31/18 , H01L31/0749
CPC classification number: H01L31/0725 , H01L31/022425 , H01L31/022466 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541
Abstract: A solar cell according to embodiments of the inventive concept includes a back electrode on a substrate, a first light absorbing layer including gallium (Ga) and indium (In) on the back electrode, a first buffer layer on the first light absorbing layer, a first window layer on the first buffer layer, a second light absorbing layer includingGa on the first window layer, a second buffer layer on the second light absorbing layer, and a second window layer on the second buffer layer, wherein a composition ratio of (Ga)/(Ga+In) of the first light absorbing layer is lower than that of the second light absorbing layer.
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13.发明申请SINGLE JUNCTION TYPE CIGS THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE THIN FILM SOLAR CELL 审中-公开单连接型薄膜薄膜太阳能电池及制造薄膜太阳能电池的方法公开(公告)号：US20140109963A1
公开(公告)日：2014-04-24
申请号：US14135621
申请日：2013-12-20
Inventor： Yong-Duck CHUNG , Won Seok HAN
IPC: H01L31/032
CPC classification number: H01L31/0322 , H01L31/02168 , H01L31/03923 , H01L31/068 , Y02E10/541 , Y02E10/547 , Y02P70/521
Abstract: Provided is a single junction type GIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type GIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type GIGS layer and an N type GIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.
Abstract translation: 提供了单结型GIGS薄膜太阳能电池，其包括使用单一结制造的CIGS光吸收层。 单结型GIGS薄膜太阳能电池包括衬底，沉积在衬底上的背面接触层，沉积在背面接触上的光吸收层，并且包括P型GIGS层和与P型CIGS层耦合的N型GIGS层 使用单结，以及沉积在光吸收层上的防反射膜。
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14.发明申请公开(公告)号：US20250105595A1
公开(公告)日：2025-03-27
申请号：US18895048
申请日：2024-09-24
Inventor： O Kyun KWON , Nam Je KIM , Ho Sung KIM , Mi Ran PARK , Seung Chul LEE , Won Seok HAN
Abstract: The present invention relates to a method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, and the method includes forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth, and applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.
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公开(公告)号：US20230227960A1
公开(公告)日：2023-07-20
申请号：US17968126
申请日：2022-10-18
Inventor： O-Kyun KWON , Namje KIM , Ho Sung KIM , Miran PARK , SEUNGCHUL LEE , Won Seok HAN
CPC classification number: C23C14/042 , G02B6/132 , G02B2006/12173
Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.
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公开(公告)号：US20160035568A1
公开(公告)日：2016-02-04
申请号：US14812856
申请日：2015-07-29
Inventor： Yong-Duck CHUNG , DAEHYUNG CHO , Woo Jung LEE , Won Seok HAN
IPC: H01L21/02
CPC classification number: H01L21/02568 , C23C14/0021 , C23C14/0057 , C23C14/0063 , C23C14/0078 , C23C14/0623 , C23C14/14 , C23C14/243 , C23C14/5866 , H01L21/02557 , H01L21/0256 , H01L21/0259 , H01L21/02614 , H01L21/02631
Abstract: Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.
Abstract translation: 提供了一种制造过渡金属硫族化物薄膜的方法，包括提供其上具有过渡金属膜的基底，蒸发硫属原料源以形成具有第二分子结构的硫族元素材料，分解具有第二分子结构的硫族元素材料以形成 具有第一分子结构的硫属材料，其中第一分子结构包含比第二分子结构相对较少的原子，并且在过渡金属膜上提供具有第一分子结构的硫族元素材料。
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