公开(公告)号：US20240077672A1

公开(公告)日：2024-03-07

申请号：US18506724

申请日：2023-11-10

Applicant: Cisco Technology, Inc.

Inventor： Subal SAHNI ,  Kamal V. KARIMANAL ,  Gianlorenzo MASINI ,  Attila MEKIS ,  Roman BRUCK

IPC: G02B6/122 ,  G02B6/12

CPC classification number: G02B6/1225 ,  G02B6/12014 ,  G02B2006/12061 ,  G02B2006/12107 ,  G02B2006/12135

Abstract: Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.

公开(公告)号：US20240004260A1

公开(公告)日：2024-01-04

申请号：US18466685

申请日：2023-09-13

Applicant: Cisco Technology, Inc.

Inventor： Attila MEKIS ,  Subal SAHNI ,  Yannick DE KONINCK ,  Gianlorenzo MASINI ,  Faezeh GHOLAMI

IPC: G02F1/225 ,  G02F1/025

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2201/12 ,  G02F2201/063 ,  G02F1/212

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US20220260775A1

公开(公告)日：2022-08-18

申请号：US17249060

申请日：2021-02-18

Applicant: Cisco Technology, Inc.

Inventor： Roman BRUCK ,  Thierry J. PINGUET ,  Attila MEKIS

IPC: G02B6/122 ,  G02B6/13

Abstract: End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.