公开(公告)号：US20160056321A1

公开(公告)日：2016-02-25

申请号：US14728985

申请日：2015-06-02

Applicant: California Institute of Technology

Inventor： Harry A. Atwater ,  Sergio Pellegrino ,  Seyed Ali Hajimiri ,  Jeffrey P. Bosco ,  Dennis Callahan ,  Emily C. Warmann

IPC: H01L31/054 ,  H01L31/0693 ,  B64G1/42 ,  H01L31/0304 ,  H01L31/0224 ,  H02S20/30 ,  H01L31/0687 ,  H01L31/052

Abstract: A space-based solar power station, a power generating satellite module and/or a method for collecting solar radiation and transmitting power generated using electrical current produced therefrom is provided. Each solar power station includes a plurality of satellite modules. The plurality of satellite modules each include a plurality of modular power generation tiles including a photovoltaic solar radiation collector, a power transmitter and associated control electronics. Numerous embodiments relate to efficient power generation tiles. In one embodiment, an efficient power generation tile includes: at least one photovoltaic material; and at least one concentrator that redirects incident solar radiation towards a photovoltaic material such that the photovoltaic material experiences a greater solar flux relative to the case where the photovoltaic material experiences unaltered solar radiation.

Abstract translation: 提供了一种太空太阳能发电站，发电卫星模块和/或收集太阳辐射并发射使用其产生的电流产生的电力的方法。 每个太阳能发电站包括多个卫星模块。 多个卫星模块各自包括多个模块化发电瓦片，包括光伏太阳辐射收集器，功率发射器和相关联的控制电子器件。 许多实施例涉及有效的发电瓦片。 在一个实施例中，有效的发电瓦片包括：至少一个光伏材料; 以及至少一个聚光器，其将入射的太阳辐射重定向到光伏材料，使得光伏材料相对于光伏材料经历未改变的太阳辐射的情况经历更大的太阳能通量。

公开(公告)号：US20150011042A1

公开(公告)日：2015-01-08

申请号：US14373598

申请日：2013-01-30

Applicant: DOW GLOBAL TECHNOLOGIESD LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Jeffrey P. Bosco ,  Rebekah K. Feist

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/548

Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。 本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。