公开(公告)号：US20230116030A1

公开(公告)日：2023-04-13

申请号：US17047925

申请日：2019-12-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Kai Sui ,  Zhongyuan Sun ,  Yupeng Gao ,  Chao Dong ,  Chuanxiang Xu

IPC: H10K50/858 ,  H10K50/856 ,  H10K50/86 ,  H10K71/60 ,  H10K59/38 ,  H10K59/122 ,  H10K59/40 ,  H10K59/35

Abstract: A method of reducing color breakup of reflection of ambient light in a display panel having a color breakup-prevention structure is provided. The color breakup-prevention structure includes a high refractive index lens layer on a side of a plurality of light emitting elements away from a base substrate; a low refractive index modulation layer on a side of the high refractive index lens layer away from the base substrate; a first color filter layer in a plurality of subpixel regions, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer; and a first black matrix layer in an inter-subpixel region, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer. The high refractive index lens layer includes a plurality of lens portions spaced apart from each other and respectively in the plurality of subpixels.

公开(公告)号：US11251208B2

公开(公告)日：2022-02-15

申请号：US16642734

申请日：2019-03-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC: H01L27/144 ,  H01L27/12 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18

Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

公开(公告)号：US20210151476A1

公开(公告)日：2021-05-20

申请号：US16642734

申请日：2019-03-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC: H01L27/144 ,  H01L31/105 ,  H01L31/0352 ,  H01L27/12 ,  H01L31/18

Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.