公开(公告)号：US12122489B1

公开(公告)日：2024-10-22

申请号：US18419512

申请日：2024-01-22

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Binzhen Zhou ,  Xu Huang ,  Peng Jin ,  Zhi Zheng ,  Lei Wang ,  Hengming Zhang ,  Chusen Lin ,  Hongjie Wen

IPC: B63B35/44 ,  B63B39/10 ,  F03B13/14

CPC classification number: B63B35/44 ,  B63B39/10 ,  F03B13/14 ,  B63B2035/4466 ,  B63B2039/105 ,  F05B2240/93

Abstract: This invention presents an ocean observation platform with an integrated, highly reliable wave energy generation mechanism, relevant to power supply technology in marine environments. It includes a platform floating body and a power generation mechanism located at the platform's bottom. The mechanism features disassemblable power generation piles, arranged in a circular array on the floating body. This design ensures that if one pile fails, the others continue generating electricity, enabling a long-term, stable, and continuous power supply. This is particularly useful for monitoring meteorological, temperature, salinity, and ocean current data in complex marine conditions.

公开(公告)号：US20230094925A1

公开(公告)日：2023-03-30

申请号：US17994022

申请日：2022-11-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/786 ,  H01L21/02 ,  H01L23/15

Abstract: Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R′ having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R′ as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R′ doping can be achieved. Compared with single rare-earth element R′ doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

公开(公告)号：US20230087472A1

公开(公告)日：2023-03-23

申请号：US17798539

申请日：2020-07-22

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng ,  Hong Tao

IPC: G09G3/32

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

公开(公告)号：US11545581B2

公开(公告)日：2023-01-03

申请号：US17158026

申请日：2021-01-26

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/66 ,  H01L29/786

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an InxMyRnR′mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

公开(公告)号：US20230377767A1

公开(公告)日：2023-11-23

申请号：US18229669

申请日：2023-08-02

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Jiawei Pang ,  Zikai Chen ,  Hong Tao ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng

IPC: H01B1/08 ,  H01B5/14

CPC classification number: H01B1/08 ,  H01B5/14

Abstract: Disclosed is a transparent conductive oxide thin film. The metal oxide is a transparent conductive material of (In2O3)x(MO)y(ReO)z formed by doping a small amount of a rare earth oxide ReO into an indium-containing metal oxide MO—In2O3 as a photon-generated carrier conversion center. According to the present application, in an indium-based metal oxide, a rare earth oxide material is introduced, such that the carrier concentration is controlled, and the mobility is improved; rare earth ions in the rare earth oxide have the lower electronegativity, and an ionic bond Ln-O formed by the rare earth ions and oxygen ions has the higher bond breaking energy, such that the oxygen vacancy concentration in the In2O3 thin film may be effectively controlled. The rare earth ions have the ionic radius equivalent to that of indium ions, defect scattering caused by structure mismatch may be reduced, the high mobility characteristics thereof may be kept better.

公开(公告)号：US20230075372A1

公开(公告)日：2023-03-09

申请号：US17799519

申请日：2021-02-08

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Hong Tao ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng

IPC: H01L27/32 ,  H01L51/00

Abstract: Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

公开(公告)号：US09673691B2

公开(公告)日：2017-06-06

申请号：US15030191

申请日：2013-12-23

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Qinghua Wu ,  Lei Wang

IPC: G05F1/00 ,  H02M1/00 ,  H02M3/156 ,  H02M3/157

CPC classification number: H02M1/00 ,  H02M3/156 ,  H02M3/1563 ,  H02M3/157 ,  H02M2001/0009 ,  H02M2003/1566

Abstract: An energy balance controller includes a detection unit, a calculation unit and a reset integral module; the reset integral module includes a reset integrator, a comparator and an RS flip-flop; the input terminals of the calculation unit and the reset integrator are connected to the output terminal of the detection unit, respectively; the output terminal of the calculation unit is connected to one input terminal of the comparator, and the output terminal of the reset integrator is connected to the other input terminal of the comparator; the output terminal of the comparator is connected to the reset terminal of the RS flip-flop; the Q terminal of the RS flip-flop is connected to the reset integrator, and the Q terminal of the RS flip-flop is used for controlling a switching device of the converter to switch on or off; the method is implemented by the energy balance controller.

公开(公告)号：US11677031B2

公开(公告)日：2023-06-13

申请号：US16529833

申请日：2019-08-02

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L29/78693 ,  H01L21/02266 ,  H01L21/02581 ,  H01L21/30604

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

公开(公告)号：US11984510B2

公开(公告)日：2024-05-14

申请号：US16678173

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/247 ,  H01L29/6675

Abstract: The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

公开(公告)号：US11894467B2

公开(公告)日：2024-02-06

申请号：US16678116

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/6675

Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.