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公开(公告)号：US11594162B2
公开(公告)日：2023-02-28
申请号：US17435297
申请日：2021-01-06
Inventor： Guangyao Li , Yuankui Ding , Liusong Ni , Jun Wang , Haitao Wang , Dongfang Wang
Abstract: The present disclosure provides a method for detecting a display substrate and a device for detecting a display substrate. The method includes: exciting a threshold voltage of a driving transistor in each pixel driving circuit in the display substrate, so that the threshold voltage of the driving transistor with a shifted threshold voltage is further shifted; inputting a detection signal to each pixel driving circuit in the display substrate, where the detection signal is a signal enabling the pixel driving circuit to operate normally; and judging whether the display substrate is normal or not according to the voltage output by each pixel driving circuit.
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公开(公告)号：US11545510B2
公开(公告)日：2023-01-03
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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公开(公告)号：US20210335604A1
公开(公告)日：2021-10-28
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11069758B2
公开(公告)日：2021-07-20
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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15.发明授权公开(公告)号：US10818798B2
公开(公告)日：2020-10-27
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66 , H01L27/12
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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Patent Agency Ranking
16.发明申请公开(公告)号：US20200152458A1
公开(公告)日：2020-05-14
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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17.发明申请公开(公告)号：US20190157308A1
公开(公告)日：2019-05-23
申请号：US16030825
申请日：2018-07-09
Inventor： Yuankui Ding , Guangcai Yuan , Ce Zhao , Bin Zhou , Jun Cheng , Zhaofan Liu , Yingbin Hu , Yongchao Huang
IPC: H01L27/12 , H01L29/786 , H01L21/027 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/42 , G03F7/038
Abstract: A method of manufacturing an array substrate assembly, an array substrate assembly manufactured by the method, and a display panel including the array substrate assembly are disclosed. The method includes: providing a substrate, the substrate having a first region as a preset semiconductor-removed region, and a second region as a remaining region; forming, in the first region of the substrate, a semiconductor removing layer corrodible by a corrosive solution; and forming a semiconductor layer on the substrate formed with the semiconductor removing layer, so that the semiconductor layer covers the semiconductor removing layer.
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公开(公告)号：US11737305B2
公开(公告)日：2023-08-22
申请号：US17260018
申请日：2020-05-27
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Ning Liu , Leilei Cheng , Junlin Peng , Yingbin Hu , Liusong Ni
IPC: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K101/30 , H10K102/10 , H10K102/00
CPC classification number: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K2101/30 , H10K2102/103 , H10K2102/3026
Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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19.发明授权公开(公告)号：US11616147B2
公开(公告)日：2023-03-28
申请号：US17254851
申请日：2020-04-08
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Song , Liusong Ni , Xuechao Sun , Chaowei Hao , Liangchen Yan
IPC: H01L29/786 , H01L21/02 , H01L27/12 , H01L29/66 , H01L29/08
Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
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公开(公告)号：US20210359140A1
公开(公告)日：2021-11-18
申请号：US16331008
申请日：2018-08-17
Inventor： Yingbin Hu , Ce Zhao , Dongfang Wang , Bin Zhou , Jun Liu , Yuankui Ding , Wei Li
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
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