公开(公告)号：US11735611B2

公开(公告)日：2023-08-22

申请号：US17355664

申请日：2021-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli Meng ,  Jiangbo Chen ,  Zeyuan Li

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

CPC classification number: H01L27/14616 ,  G01T1/2018 ,  H01L27/14603 ,  H01L27/14659 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78666

Abstract: A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.

公开(公告)号：US11604291B2

公开(公告)日：2023-03-14

申请号：US17352962

申请日：2021-06-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zeyuan Li ,  Jiangbo Chen ,  Fanli Meng

IPC: G01T1/24 ,  H01L27/146 ,  H04N5/341

Abstract: The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

公开(公告)号：US20220223640A1

公开(公告)日：2022-07-14

申请号：US17355664

申请日：2021-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli Meng ,  Jiangbo Chen ,  Zeyuan Li

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

Abstract: A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.