公开(公告)号：US11189529B2

公开(公告)日：2021-11-30

申请号：US16294109

申请日：2019-03-06

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Srinivas Gandikota

IPC: H01L21/768 ,  C23C16/30 ,  H01L21/321 ,  C23C14/14 ,  C23C14/04 ,  C23C16/04 ,  C23C14/58 ,  C23C14/06 ,  H01L21/02 ,  H01L21/3213

Abstract: Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

公开(公告)号：US20200279772A1

公开(公告)日：2020-09-03

申请号：US16647310

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Amrita B. Mullick

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/44 ,  C23C16/42 ,  C23C16/56

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.