公开(公告)号：US11347154B2

公开(公告)日：2022-05-31

申请号：US16961747

申请日：2019-02-12

Applicant: ASML Netherlands B.V.

Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue Ma

IPC: G03F7/20 ,  H01J37/32 ,  H05G2/00 ,  H05H1/46

Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

公开(公告)号：US20210325791A1

公开(公告)日：2021-10-21

申请号：US17283722

申请日：2019-10-21

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Dzmitry Labetski ,  Andrew David LaForge

IPC: G03F7/20 ,  H05G2/00

Abstract: Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.

公开(公告)号：US10955749B2

公开(公告)日：2021-03-23

申请号：US16469689

申请日：2018-01-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Dzmitry Labetski ,  Christianus Wilhelmus Johannes Berendsen ,  Rui Miguel Duarte Rodriges Nunes ,  Alexander Igorevich Ershov ,  Kornelis Frits Feenstra ,  Igor Vladimirovich Fomenkov ,  Klaus Martin Hummler ,  Arun Johnkadaksham ,  Matthias Kraushaar ,  Andrew David Laforge ,  Marc Guy Langlois ,  Maksim Loginov ,  Yue Ma ,  Seyedmohammad Mojab ,  Kerim Nadir ,  Alexander Shatalov ,  John Tom Stewart, IV ,  Henricus Gerardus Tegenbosch ,  Chunguang Xia

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

公开(公告)号：US12287455B2

公开(公告)日：2025-04-29

申请号：US17625426

申请日：2020-06-26

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Marcus Adrianus Van De Kerkhof ,  Qiushi Zhu ,  Klaus Martin Hummler ,  Peter Matthew Mayer ,  Kay Hoffmann ,  Andrew David LaForge ,  Igor Vladimirovich Fomenkov ,  Daniel John William Brown

IPC: G02B5/08 ,  G02B1/14 ,  G03F7/00

Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

公开(公告)号：US20250085643A1

公开(公告)日：2025-03-13

申请号：US18962837

申请日：2024-11-27

Applicant: ASML Netherlands B.V.

Inventor： Chunguang Xia ,  Jonghoon Baek ,  John Tom Stewart, IV ,  Andrew David LaForge ,  Deniz Van Heijnsbergen ,  David Robert Evans ,  Nina Vladimirovna Dziomkina ,  Yue Ma

IPC: G03F7/00 ,  H01J37/32 ,  H05H1/46

Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

公开(公告)号：US20240160109A1

公开(公告)日：2024-05-16

申请号：US18508987

申请日：2023-11-14

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Antonius Theodorus Wilhelmus Kempen ,  Klaus Martin Hummler ,  Johannes Hubertus Josephina Moors ,  Jeroen Hubert Rommers ,  Hubertus Johannes Van De Wiel ,  Andrew David Laforge ,  Fernando Brizuela ,  Rob Carlo Wieggers ,  Umesh Prasad Gomes ,  Elena Nedanovska ,  Celal Korkmaz ,  Alexander Downn Kim ,  Rui Miguel Duarte Rodrigues Nunes ,  Hendrikus Alphonsus Ludovicus Van Dijck ,  William Peter Van Drent ,  Peter Gerardus Jonkers ,  Qiushi Zhu ,  Parham Yaghoobi ,  Jan Steven Christiaan Westerlaken ,  Martinus Hendrikus Antonius Leenders ,  Alexander Igorevich Ershov ,  Igor Vladimirovich Fomenkov ,  Fei Liu ,  Johannes Henricus Wilhelmus Jacobs ,  Alexey Sergeevich Kuznetsov

IPC: G03F7/00

CPC classification number: G03F7/70166 ,  G03F7/70033 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

公开(公告)号：US20230010251A1

公开(公告)日：2023-01-12

申请号：US17784951

申请日：2020-12-09

Applicant: ASML Netherlands B.V.

Inventor： Taylor John Hartung ,  Yue Ma ,  Marc Guy Langlois ,  Jeremy Burke ,  Esteban Joseph Sandoval Johnson

IPC: G03F7/20

Abstract: Systems, apparatuses, and methods are provided for a collector flow ring (CFR) housing configured to mitigate an accumulation of fuel debris in an extreme ultraviolet (EUV) radiation system. An example CFR housing can include a plurality of showerhead flow channel outlets configured to output a plurality of first gaseous fluid flows over a plurality of portions of a plasma-facing surface of the CFR housing. The example CFR housing can further include a gutter purge flow channel outlet configured to output a second gaseous fluid flow over a fuel debris-receiving surface of the CFR housing. The example CFR housing can further include a shroud mounting structure configured to support a shroud assembly, a cooling flow channel configured to transport a fluid, and a plurality of optical metrology ports configured to receive a plurality of optical metrology tubes.

公开(公告)号：US20220260756A1

公开(公告)日：2022-08-18

申请号：US17625426

申请日：2020-06-26

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Marcus Adrianus Van De Kerkhof ,  Qiushi Zhu ,  Klaus Martin Hummler ,  Peter Matthew Mayer ,  Kay Hoffmann ,  Andrew David LaForge ,  Igor Vladimirovich Fomenkov ,  Daniel John William Brown

IPC: G02B1/14 ,  G02B5/08 ,  G03F7/20

Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.