公开(公告)号：US20200373159A1

公开(公告)日：2020-11-26

申请号：US16853500

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Takehito KOSHIZAWA ,  Rui CHENG ,  Tejinder SINGH ,  Hidetaka OSHIO

IPC: H01L21/033 ,  H01L21/311

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.