公开(公告)号：US20220139684A1

公开(公告)日：2022-05-05

申请号：US17183587

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： John Joseph MAZZOCCO ,  Anantha K. SUBRAMANI ,  Yang GUO

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  C23C14/14 ,  C23C14/58 ,  H01J37/32

Abstract: Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

公开(公告)号：US20180209035A1

公开(公告)日：2018-07-26

申请号：US15857384

申请日：2017-12-28

Applicant: Applied Materials, Inc.

Inventor： Jingjing LIU ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Yongmei CHEN ,  Anantha K. SUBRAMANI

IPC: C23C14/34 ,  H01L21/265 ,  H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/35 ,  C23C14/48

Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

公开(公告)号：US20180073150A1

公开(公告)日：2018-03-15

申请号：US15703626

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Anantha K. SUBRAMANI ,  Praburam GOPALRAJA ,  Tza-Jing GUNG ,  Hari K. PONNEKANTI ,  Philip Allan KRAUS

IPC: C23C28/02 ,  C23C16/458 ,  C23C16/40 ,  C23C16/06 ,  C23C14/50 ,  C23C14/14 ,  C23C14/02 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  H01L21/02 ,  H01L21/285

Abstract: Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.

公开(公告)号：US20140190822A1

公开(公告)日：2014-07-10

申请号：US14204873

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Martin Lee RIKER ,  Keith A. MILLER ,  Anantha K. SUBRAMANI

IPC: H01J37/34

CPC classification number: C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract translation: 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。