公开(公告)号：US20220363989A1

公开(公告)日：2022-11-17

申请号：US17760519

申请日：2020-06-01

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Chang-Koo KIM ,  Jun-Hyun KIM ,  Jin-Su PARK

IPC: C09K13/00 ,  H01L21/311 ,  H01J37/32

Abstract: Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethly-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:

公开(公告)号：US20200264339A1

公开(公告)日：2020-08-20

申请号：US16866017

申请日：2020-05-04

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Chang-Koo KIM ,  Jun-Hyun KIM

IPC: G02B1/11 ,  H01L31/18 ,  H01L33/44 ,  G02B5/02 ,  G02B1/12 ,  H01L31/028 ,  H01L31/0236 ,  H01L33/46 ,  H01L31/054

Abstract: The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.